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Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells

T.K. Sharma1, R. Jangir1, S. Porwal1, R. Kumar1, Tapas Ganguli1, M. Zorn2, U. Zeimer2, F. Bugge2, M. Weyers2, and S.M. Oak1

Published in:

Phys. Rev. B, vol. 80, no. 165403 (2009).

Abstract:

Highly strained InGaAs/GaAs quantum wells (QWs) are studied using the complementary spectroscopic and high-resolution x-ray diffraction (HRXRD) techniques. It is found that the QW features can be precisely identified by solving the Schrödinger equation for a rectangular shape QW, thus ignoring any indium segregation effect and considering only the compositional dependence of bowing parameter (C) while using the QW parameters obtained from HRXRD measurements. The compositional dependence of "C" for InxGa1-xAs QWs (0.294≤x≤0.42) can be given by a linear relationship of C=0.3525+0.9028x, which provides a conduction band offset (ΔEc) of the functional form: ΔEc=0.7529x+0.2917x2-0.4785x3 using the band offset (Qc) value of 0.53. It is also observed that Qc is independent of the composition of QWs. Though the QW sample with the maximum strain showed some relaxation (R≈3.4%) as measured by the reciprocal space mapping in HRXRD, still it is largely insignificant and does not affect the measured value of "C" for the present set of QW samples.

1 Semiconductor Laser Section, Raja Ramanna Centre for Advanced Technology, Indore 452 013, Madhya Pradesh, India
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany

Keywords:

bending, conduction bands, gallium arsenide, III-V semiconductors, indium compounds, Schrodinger equation, segregation, semiconductor quantum wells, X-ray diffraction.

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