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High-power 808 nm ridge-waveguide diode lasers with very small divergence, wavelength-stabilized by an external volume Bragg grating
/forschung/publikationen/high-power-808-nm-ridge-waveguide-diode-lasers-with-very-small-divergence-wavelength-stabilized-by-an-external-volume-bragg-grating
We present data on ridge-waveguide diode lasers having a vertical far-field divergence of only 11.5° (FWHM) owing to an appropriate waveguide design. The lasers emitted an optical power of more than…
Epitaxial lateral over growth on (2110) α-plane GaN with [0111]-oriented stripes
/forschung/publikationen/epitaxial-lateral-over-growth-on-2110-a-plane-gan-with-0111-oriented-stripes
Epitaxial lateral overgrowth was applied to α-plane GaN on r-plane sapphire using SiO2 stripe masks oriented parallel to [0111]. Coalescence and defect distribution was studied using scanning…
Trumpf entwickelt 1kW-Halbleiterlaser
/media-center/medienschau/trumpf-entwickelt-1kw-halbleiterlaser
Er besitzt eine Leistung von 1020 Watt bei einer Stromstärke von 1100 Ampère: Die Trumpf Laser GmbH, ansässig im Technologiepark Berlin Adlershof, hat den leistungsstärksten Laserbarren der…
Regionale Auftaktveranstaltung "Forschungsfabrik Mikroelektronik Deutschland"
/termine/regionale-auftaktveranstaltung-forschungsfabrik-mikroelektronik-deutschland
Auftaktveranstaltung der Berlin-Brandenburger Partnerinstitute der "Forschungsfabrik Mikroelektronik Deutschland" mit Frau Bundesministerin Johanna Wanka - mit Anmeldung.
Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation
/forschung/publikationen/catastrophic-optical-mirror-damage-in-diode-lasers-monitored-during-single-pulse-operation
Catastrophic optical mirror damage (COMD) is analyzed for 808 nm emitting diode lasers in single-pulse operation in order to separate facet degradation from subsequent degradation processes.…
Strain engineering of AlGaN-GaN HFETs grown on 3 inch 4H-SiC
/forschung/publikationen/strain-engineering-of-algan-gan-hfets-grown-on-3-inch-4h-sic
In this work strain evolution during MOVPE of AlGaN/GaN HFET structures on 3 inch SiC substrates is investigated in-situ and related to properties of the initial AlN wetting layer. It is shown that…
Electroluminescence characterization of AlGaN/GaN HEMTs
/forschung/publikationen/electroluminescence-characterization-of-algangan-hemts
Microscopic electroluminescence (EL) measurements on Al- GaN/GaN high-electron-mobility transistors are reported. Photon emission is detected from front side and also from the backside of the wafer.…
Wide Temperature Range High Power Broad Area 975nm DFB Lasers
/forschung/publikationen/wide-temperature-range-high-power-broad-area-975nm-dfb-lasers
100µm stripe 975nm DFB lasers are shown to operate with spectral width <0.35nm to 100°C. Narrow (14°) vertical far field and reasonable conversion efficiency (39,5%) were achieved. A comparison…
1060-nm Multi Quantum Well Diode Lasers With Narrow Vertical Divergence Angle of 8° and High Internal Efficiency
/forschung/publikationen/1060-nm-multi-quantum-well-diode-lasers-with-narrow-vertical-divergence-angle-of-8-and-high-internal-efficiency
MQW 1060 nm structures with extremely thick 8.64µm waveguide resulting in 8° angle of vertical divergence have been grown and tested. The measurements of uncoated lasers promise high optical…
A Novel Self-Pinching Gate Biasing Scheme for Safe Operation and Characterization of GaN HEMTs
/forschung/publikationen/a-novel-self-pinching-gate-biasing-scheme-for-safe-operation-and-characterization-of-gan-hemts
This letter presents a novel gate bias configuration for GaN HEMTs that ensures a safe operation of this kind of device by protecting the gate from forward turn-on. The bias circuit includes a simple…