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Improving the stability of distributed-feedback tapered master-oscillator power-amplifiers
/forschung/publikationen/improving-the-stability-of-distributed-feedback-tapered-master-oscillator-power-amplifiers
We consider theoretically the lasing properties of distributed-feedback master-oscillator power-amplifiers which are compact semiconductor laser devices capable of emitting a high brilliance beam at…
Dynamics and stability improvement of DFB tapered master-oscillator power-amplifiers
/forschung/publikationen/dynamics-and-stability-improvement-of-dfb-tapered-master-oscillator-power-amplifiers
We consider theoretically the lasing properties of distributed-feedback master-oscillator poweramplifiers which are compact semiconductor laser devices capable of emitting a high brilliance beam at…
Finite element analysis of novel semiconductor lasers
/forschung/publikationen/finite-element-analysis-of-novel-semiconductor-lasers
Performance of nano-optical laser devices depends very sensitively on the system's design. We perform finite element simulations to get physical insight and optimize novel laser concepts. Our…
Temperature Dependence of Picosecond Pulse Performance of a DFB Laser
/forschung/publikationen/temperature-dependence-of-picosecond-pulse-performance-of-a-dfb-laser
The temperature dependance of spectra and pulse shapes of gain-switched DFB laser diodes is investigated. Spectral purity can be tuned from a Fabry-Pérot-like multi-mode spectrum to dynamic…
A Novel Atmospheric Microplasma Source with Integrated GaN HEMT Microwave Power Oscillator
/forschung/publikationen/a-novel-atmospheric-microplasma-source-with-integrated-gan-hemt-microwave-power-oscillator
A novel atmospheric microplasma source is presented, where the microwave power is generated by an integrated power oscillator, which is based on a GaN HEMT transistor. A microwave resonator acts as…
Assessment of the Limits to Peak Power of 1100nm Broad Area Single Emitter Diode Lasers under Short Pulse Conditions
/forschung/publikationen/assessment-of-the-limits-to-peak-power-of-1100nm-broad-area-single-emitter-diode-lasers-under-short-pulse-conditions
We present the results of a study using commercial high current short pulse sources (>200A, <500ns) to assess the performance and endurance limits of high power broad area devices.
Compact Watt-class visible light sources using direct frequency-doubled edge-emitting diode lasers
/forschung/publikationen/compact-watt-class-visible-light-sources-using-direct-frequency-doubled-edge-emitting-diode-lasers
Compact laser light sources in the visible spectral range emitting several Watts are required for display technology, sensor systems and material processing. Second harmonic generation (SHG) using…
HVPE growth of AlxGa1-xN alloy layers
/forschung/publikationen/hvpe-growth-of-alxga1-xn-alloy-layers
In this work growth of AlxGa1-xN layers (0 < x < 0.91) by hydride vapour phase epitaxy (HVPE) is presented. The growth process is performed in a modified horizontal reactor.…
Influence of GaN cap on robustness of AlGaN/GaN HEMTs
/forschung/publikationen/influence-of-gan-cap-on-robustness-of-algangan-hemts
DC-Step-Stress-Tests of GaN HEMTs have been performed on wafers with and without GaN-cap. The tests consist of a step ramping of drain-source voltage VDS by 5V every two hours at off-state. The…
Advanced thin film technology for ultrahigh resolution X-ray microscopy
/forschung/publikationen/advanced-thin-film-technology-for-ultrahigh-resolution-x-ray-microscopy
Further progress in the spatial resolution of X-ray microscopes is currently impaired by fundamental limitations in the production of X-ray diffractive lenses. Here, we demonstrate how advanced thin…