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Facet formation for laser diodes on nonpolar and semipolar GaN
/forschung/publikationen/facet-formation-for-laser-diodes-on-nonpolar-and-semipolar-gan
Different technologies have been evaluated in order to create vertical and smooth facets for GaN-based laser diodes on nonand semipolar substrates. Laser assisted scribing and cleaving proved to be a…
AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)
/forschung/publikationen/alganganalgan-dh-hemts-breakdown-voltage-enhancement-using-multiple-grating-field-plates-mgfps
GaN-based high-electron mobility transistors with planar multiple grating field plates (MGFPs) for high-voltage operation are described. A synergy effect with additional electron channel confinement…
RF Class-S Power Amplifiers: State-of-the-Art Results and Potential
/forschung/publikationen/rf-class-s-power-amplifiers-state-of-the-art-results-and-potential
This paper reports recent results on a current-mode class-S power amplifier for the 450 MHz band, based on GaNHEMT MMICs. We achieve a peak output power of 8.7 W for a single tone at…
Laser Driver Switching 20 A with 2 ns Pulse Width Using GaN
/forschung/publikationen/laser-driver-switching-20nbspa-with-2nbspns-pulse-width-using-gan
A GaN-HEMT-based circuit is presented capable of switching 20 A of current with less than about 0.5 ns rise and fall time. This demonstrates the potential of GaN transistors for highcurrent…
Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors
/forschung/publikationen/effect-of-buffer-thickness-on-dc-and-microwave-performance-of-algangan-heterojunction-field-effect-transistors
The authors compared DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors (HFETs) fabricated on epitaxial structures with different thickness of GaN buffer layer. The…
Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs
/forschung/publikationen/influence-of-the-device-geometry-on-the-schottky-gate-characteristics-of-algangan-hemts
In this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and…
A 1 W Si-LDMOS Power Amplifier with 40% Drain Efficiency for 6 GHz WLAN Applications
/forschung/publikationen/a-1nbspw-si-ldmos-power-amplifier-with-40-drain-efficiency-for-6nbspghz-wlan-applications
The design and characterization of LDMOS power transistors and amplifiers developed for 6 GHz WLAN applications are presented. Transistors of different size were fabricated in a 0.25 µm…
High-power high-brightness semiconductor lasers based on novel waveguide concepts
/forschung/publikationen/high-power-high-brightness-semiconductor-lasers-based-on-novel-waveguide-concepts
We have designed, fabricated and measured the performance of two types of edge emitting lasers with unconventional waveguides and lateral arrays thereof. Both designs provide high power and low…
High-power ridge waveguide DFB and DFB-MOPA lasers at 1064 nm with a vertical farfield angle of 15°
/forschung/publikationen/high-power-ridge-waveguide-dfb-and-dfb-mopa-lasers-at-1064-nm-with-a-vertical-farfield-angle-of-15
We present high-power ridge waveguide (RW) distributed feedback (DFB) lasers and DFB master optical power amplifiers (DFB-MOPAs) with high-quality beams optimized for pulsed operation and current…
High peak power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser
/forschung/publikationen/high-peak-power-pulse-generation-with-ghz-repetition-rate-using-a-q-switched-1060nm-dbr-tapered-laser
Experimental results from a Q-switched three section tapered laser, with an InGaAs triple quantumwell (TQW) active region, consisting of a 2000 µm long tapered element, a 1000 µm ridge waveguide (RW)…