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Advances in spatial and spectral brightness in 800-1100 nm GaAs-based high power broad area lasers
/forschung/publikationen/advances-in-spatial-and-spectral-brightness-in-800-1100nbspnm-gaas-based-high-power-broad-area-lasers
High power broad area diode lasers generate the optical energy in all high performance, high power laser systems, either directly or as pump sources for fiber or solid state lasers. Advances in the…
Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
/forschung/publikationen/reducing-thermal-resistance-of-algangan-electronic-devices-using-novel-nucleation-layers
Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC…
Class-S Amplifier at 450 MHz Using GaN-HEMT Power Switch MMICs
/forschung/publikationen/class-s-amplifier-at-450nbspmhz-using-gan-hemt-power-switch-mmics
This paper reports on the realization and characterization of GaN-HEMT based power-switch MMICs suitable for class-S operation. The amplifier operates in the 500 MHz band with a sampling bit-rate of…
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures
/forschung/publikationen/characterization-of-stress-degradation-effects-and-thermal-properties-of-algangan-hemts-with-photon-emission-spectral-signatures
The influence of stress degradation and device temperature variation on the device properties has been investigated with electrical and photon emission (PE) measurements. To degrade the devices the…
A Simplified Switch-Based GaN HEMT Model for RF Switch-Mode Amplifiers
/forschung/publikationen/a-simplified-switch-based-gan-hemt-model-for-rf-switch-mode-amplifiers
A simplified switch-based model is proposed for GaNHEMTs, which is suitable for the design of switch-mode-type amplifiers, in both time and frequency domain. The model is validated using a…
Design and Realization of an Output Network for a GaN-HEMT Current-Mode Class-S Power Amplifier at 450 MHz
/forschung/publikationen/design-and-realization-of-an-output-network-for-a-gan-hemt-current-mode-class-s-power-amplifier-at-450-mhz
This paper describes the design and realization of a hybrid lumped output network for a current-mode class-S power amplifier. It consist of a band pass filter, a balun and a broadband constant…
Monolithically Integrated GaInP/GaAs High-Voltage HBTs and Fast Power Schottky Diodes for Switch-Mode Amplifiers
/forschung/publikationen/monolithically-integrated-gainpgaas-high-voltage-hbts-and-fast-power-schottky-diodes-for-switch-mode-amplifiers
Based on mature and high-yield high-voltage (HV) HBT technology monolithically integrated ultra-fast Schottky diodes are developed. The Schottky diodes take full advantage of the optimized HV-HBT…
Reliability of diode lasers for space applications
/forschung/publikationen/reliability-of-diode-lasers-for-space-applications
Qualification results of diode lasers for space applications are presented. Quantum well lasers (AlGaAs / GaAsP at 808 nm) were subjected to accelerated life test. No sudden failure was observed…
A Novel Load-Pull Setup with Envelope Calibration for Bias Modulated Measurements
/forschung/publikationen/a-novel-load-pull-setup-with-envelope-calibration-for-bias-modulated-measurements
In this paper a measurement system for evaluation of RF-Power transistors in high-efficiency operation using drain bias-modulation is presented. The system is based on a novel 2- tone load-pull…
A Load-Pull Based Device Evaluation Method for Bias Modulated Applications
/forschung/publikationen/a-load-pull-based-device-evaluation-method-for-bias-modulated-applications
In this paper an evaluation method for RF-Power transistors for high-efficiency applications using drain biasmodulation is presented. The method is based on post processing of continuous wave…