T. Krämer, C. Meliani, F.J. Schmückle, J. Würfl, and G. Tränkle

Published in:

IEEE Trans. Microwave Theory Tech., vol. 57, no. 9, pp. 2114-2121 (2009).

Abstract:

Promising transistor results of an InP transferred substrate (TS) technology are presented. f_t and f_max are reported as high as 420 and 450 GHz, respectively. Processing has been developed to a full monolithic microwave integrated circuit compatible technology with metal-insulator-metal capacitors, NiCr resistors, and a multilevel wiring scheme. As an example, traveling-wave amplifiers (TWAs) have been designed and realized in a microstrip environment. Simulations of the environment have been done, and are presented in this paper. They have then been used as a design kit to perform circuit simulations. The TWAs demonstrate a gain of 12.8 dB and a 3-dB cutoff frequency of 70 GHz. To the authors’ knowledge, this is the highest proven bandwidth of a broadband amplifier in TS technology.

Index Terms:

Distributed amplifiers, InP heterojunction bipolar transistors (HBTs), integrated circuit modeling.

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