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633nm tapered diode lasers with external wavelength stabilisation for HeNe applications
/forschung/publikationen/633nm-tapered-diode-lasers-with-external-wavelength-stabilisation-for-hene-applications
We will present novel 633 nm diode lasers operating continuous wave with lateral, using a taper laser geometry, and longitudinal, using external volume Bragg gratings, mode filtering at room…
Beam properties of gain-guided array structures from low to high power operation
/forschung/publikationen/beam-properties-of-gain-guided-array-structures-from-low-to-high-power-operation
Here the behaviour of 1060 nm and 1150 nm gain-guided array lasers from low to high power operation is investigated, showing the limitations of these devices for external V-shaped cavity…
Sub-200-fs Passively Mode-Locked Semiconductor Disk Laser
/forschung/publikationen/sub-200-fs-passively-mode-locked-semiconductor-disk-laser
The femtosecond laser performance of an optically pumped InGaAs-AlGaAs disk laser emitting around 1.04 µm was studied. Using a saturable absorber with a surface-near quantum well, 190-fs-pulses…
Highly Robust X-Band LNA with Extremely Short Recovery Time
/forschung/publikationen/highly-robust-x-band-lna-with-extremely-short-recovery-time
GaN-based low-noise amplfiers (LNAs) recently were shown to provide high ruggedness together with low noise figure. These LNAs allow for simplified receiver architectures, e.g., since no limiter is…
Single-Mode Q-Switched Pulse Generation from a Tapered DBR Laser
/forschung/publikationen/single-mode-q-switched-pulse-generation-from-a-tapered-dbr-laser
Q-switching of a 1060 nm quantum-well tapered DBR laser is investigated. Single-mode optical pulses are generated with a peak power of 3.4W, pulse energy of 1nJ and a FWHM spectral width of…
Microsystem light source at 671 nm for shifted excitation Raman difference spectroscopy
/forschung/publikationen/microsystem-light-source-at-671-nm-for-shifted-excitation-raman-difference-spectroscopy
A novel compact wavelength stabilized diode laser system at 671 nm on a micro-optical bench as a light source for shifted excitation Raman difference spectroscopy (SERDS) is presented. Two…
Hand-held Raman Sensor Head for In-situ Characterization of Meat Quality Applying a Microsystem 671 nm Diode Laser
/forschung/publikationen/hand-held-raman-sensor-head-for-in-situ-characterization-of-meat-quality-applying-a-microsystem-671-nm-diode-laser
A hand-held Raman sensor head was developed for the in-situ characterization of meat quality. As light source, a microsystem based external cavity diode laser module (ECDL) emitting at 671 nm…
Microsystem technology based diode lasers and Raman sensors for in situ food quality control
/forschung/publikationen/microsystem-technology-based-diode-lasers-and-raman-sensors-for-in-situ-food-quality-control
A microsystem based Raman sensor system for the in situ control of meat was realized. As excitation laser source a compact external cavity diode laser (ECDL) emitting at 671.0 nm mounted on a…
In-situ Characterization of Meat Aging with Diode-Laser Raman Spectroscopy
/forschung/publikationen/in-situ-characterization-of-meat-aging-with-diode-laser-raman-spectroscopy
Due to the narrow linewidth signals and its fingerprinting nature, Raman spectra provide information about the molecular structure and composition of the samples. In this paper, the applicability of…
Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier
/forschung/publikationen/mode-locked-ingaas-algaas-disk-laser-generating-sub-200-fs-pulses-pulse-picking-and-amplification-by-a-tapered-diode-amplifier
Almost chirp-free pulses with a duration of 190 fs were achieved from a mode-locked semiconductor disk laser (SDL) emitting at ≈1045 nm. Pulse shaping was different from the soliton-like…