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Theoretical and experimental investigations of the limits to the maximum output power of laser diodes
/forschung/publikationen/theoretical-and-experimental-investigations-of-the-limits-to-the-maximum-output-power-of-laser-diodes
The factors that limit both the continuous wave (CW) and the pulsed output power of broad-area laser diodes driven at very high currents are investigated theoretically and experimentally. The…
Modal Behavior, Spatial Coherence, and Beam Quality of a High-Power Gain-Guided Laser Array
/forschung/publikationen/modal-behavior-spatial-coherence-and-beam-quality-of-a-high-power-gain-guided-laser-array
In this paper, we investigate the modal behavior and the spatial coherence properties of a gain-guided laser array emitting an optical output power of more than 50 W in quasi-continuous-wave…
Red-emitting tapered diode lasers for display applications
/forschung/publikationen/red-emitting-tapered-diode-lasers-for-display-applications
High-brightness tapered diode lasers (TPLs) are an ideal high-luminance light source for display applications such as pocket projectors, laser TVs, laser shows, and projectors for virtual reality…
Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector
/forschung/publikationen/enhancement-of-light-extraction-in-ultraviolet-light-emitting-diodes-using-nanopixel-contact-design-with-al-reflector
We report on a nanopixel contact design for nitride-based ultraviolet light-emitting diodes to enhance light extraction. The structure consists of arrays of Pd ohmic contact pixels and an overlying…
Hydride vapor phase epitaxy of GaN boules using high growth rates
/forschung/publikationen/hydride-vapor-phase-epitaxy-of-gan-boules-using-high-growth-rates
The boule-like growth of GaN in a vertical AIXTRON HVPE reactor was studied. Extrinsic factors like properties of the starting substrate and fundamental growth parameters especially the vapor gas…
Fourier domain mode-locked swept source at 1050 nm based on a tapered amplifier
/forschung/publikationen/fourier-domain-mode-locked-swept-source-at-1050nbspnm-based-on-a-tapered-amplifier
While swept source optical coherence tomography (OCT) in the 1050 nm range is promising for retinal imaging, there are certain challenges. Conventional semiconductor gain media have limited…
Structure investigations of nonpolar GaN layers
/forschung/publikationen/structure-investigations-of-nonpolar-gan-layers
Summary: The microstructure of nonpolar m-plane (100) oriented GaN layers deposited on (100)γ -LiAlO2 was analysed by transmission electron microscopy. This study shows that the films contain a large…
Diode-pumped gigahertz femtosecond Yb:KGW laser with a peak power of 3.9 kW
/forschung/publikationen/diode-pumped-gigahertz-femtosecond-ybkgw-laser-with-a-peak-power-of-39nbspkw
We present a diode-pumped Yb:KGW laser with a repetition rate of 1 GHz and a pulse duration of 281 fs at a wavelength of 1041 nm. A high brightness distributed Bragg reflector tapered…
Broadband 20-Ω 20-W Load Suitable for Characterization of Switch-Mode Amplifiers
/forschung/publikationen/broadband-20-o-20-w-load-suitable-for-characterization-of-switch-mode-amplifiers
This paper reports on a broadband dc ground isolated 20-Ω absorber for powers of up to 20 W. The realized absorber achieves reflections (referenced to 20Ω) below-10 dB over almost two frequency…
Narrow Linewidth DFB Lasers Emitting Near a Wavelength of 1064 nm
/forschung/publikationen/narrow-linewidth-dfb-lasers-emitting-near-a-wavelength-of-1064-nm
We report on the realization of narrow linewidth high power DFB diode lasers emitting near 1064 nm in stable longitudinal and lateral single mode. The linewidth is analyzed in dependence of the…