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Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure
/forschung/publikationen/improving-the-linearity-of-gan-hemts-by-optimizing-epitaxial-structure
This paper presents an effective method of improving the linearity of GaN/AlGaN high-electron mobility transistors (HEMTs) by optimizing barrier (AlGaN Layer) thickness or implementing doped GaN cap…
Ignition Delay for Atmospheric Pressure Microplasmas
/forschung/publikationen/ignition-delay-for-atmospheric-pressure-microplasmas
The ignition process in microplasmas is characterized by time resolved microwave reflection coefficient measurements, using a specially equipped vector network analyzer. We measured the time between…
1.5 W green light generation by single-pass second harmonic generation of a single frequency tapered diode laser
/forschung/publikationen/15nbspw-green-light-generation-by-single-pass-second-harmonic-generation-of-a-single-frequency-tapered-diode-laser
More than 1.5 W of green light at 531 nm is generated by singlepass second harmonic generation in periodically poled MgO:LiNbO3. The pump laser is a high power tapered laser with a distributed Bragg…
Highly Rugged 30 GHz GaN Low-Noise Amplifiers
/forschung/publikationen/highly-rugged-30-ghz-gan-low-noise-amplifiers
GaN low-noise amplifiers (LNAs) operating at 27-31 GHz are presented in this letter. The monolithically integrated LNAs were fabricated using the process line of the Ferdinand-Braun-Institut. Noise…
Narrow Vertical Far-Field 975-nm Broad-Area DFB Lasers for Wide Temperature Range Operation
/forschung/publikationen/narrow-vertical-far-field-975-nm-broad-area-dfb-lasers-for-wide-temperature-range-operation
We report on 100-µm-wide 975-nm distributed-feedback lasers with a cavity length of 2 mm, which deliver 2.4 W within a 14° vertical far-field angle (full-width at half-maximum) and 35% power…
1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality
/forschung/publikationen/1060-nm-dbr-tapered-lasers-with-12-w-output-power-and-a-nearly-diffraction-limited-beam-quality
High-brightness narrow line-width 1060 nm tapered lasers with an internal distributed Bragg reflector were realized. The devices reach a maximal output power of 12 W with a narrow spectral…
MOVPE growth for UV-LEDs
/forschung/publikationen/movpe-growth-for-uv-leds
Challenges for the MOVPE growth of LED heterostructures for emission in the UV-A and UV-B spectral range are discussed. Special attention is given to the effects of strain in the In(Al)GaN active…
Microsystem 671 nm light source for shifted excitation Raman difference spectroscopy
/forschung/publikationen/microsystem-671-nm-light-source-for-shifted-excitation-raman-difference-spectroscopy
We present a compact wavelength stabilized diode laser system at 671 nm on a micro-optical bench as a light source for shifted excitation Raman difference spectroscopy (SERDS). The laser system…
Measurement and Simulation of Distributed-Feedback Tapered Master-Oscillator Power Amplifiers
/forschung/publikationen/measurement-and-simulation-of-distributed-feedback-tapered-master-oscillator-power-amplifiers
The spectral and spatial behavior of monolithically integrated distributed-feedback tapered master-oscillator power amplifiers emitting around 973 nm is experimentally and theoretically…
Experimental method for scanning the surface depletion region in nitride based heterostructures
/forschung/publikationen/experimental-method-for-scanning-the-surface-depletion-region-in-nitride-based-heterostructures
The group-III-nitride semiconductors feature strong spontaneous polarization in the [0001] direction and charges on the respective polar surfaces. Within the resulting surface depletion region the…