Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement
E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle
Published in:
phys. stat. sol. (c), vol. 6, no. 6, pp. 1373-1377 (2009).
Abstract:
In this paper we present an enhancement of punch-through voltage in AlGaN/GaN high electron mobility transistor devices by increasing the electron confinement in the transistor channel using an AlGaN buffer layer structure. An optimized electron confinement results both, in a scaling of punch through voltage with device geometry and a significantly reduced subthreshold drain leakage current. These beneficial properties are pronounced even further if gate recess technology is applied for device fabrication. Physical-based device simulations give insight in the respective electronic mechanisms.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
PACS:
73.40.Kp, 73.61.Ey, 85.30.De, 85.30.Tv
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