E. Bahat-Treidel, R. Lossy, J. Würfl, and G. Tränkle

Published in:

IEEE Electron Device Lett., vol. 30, no. 9, pp. 901-903 (2009).

Abstract:

We present an AlGaN/GaN high-electron mobility transistor (HEMT) with an integrated recessed protection diode on the drain side of the transistor channel. Results from our Schottky-drain HEMT demonstrate an excellent reverse blocking with minor tradeoff in the ON-state resistance for the complete device. The excellent quality of the forward diode characteristics indicates high robustness of the recess process. The reverse blocking capability of the diode is better than -110 V. Physical-based device simulations give an insight in the respective electronic mechanisms. This is the first time that a recessed Schottky-drain diode integrated in a HEMT device is presented.

Index Terms:

AlGaN/GaN high-electron mobility transistor (HEMT), protection diode, recessed Schottky-drain diode

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