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High-power, high-brightness semiconductor tapered diode lasers for the red and near infrared spectral range
/forschung/publikationen/high-power-high-brightness-semiconductor-tapered-diode-lasers-for-the-red-and-near-infrared-spectral-range
The most promising concept to achieve high-output power together with a good beam quality is the tapered laser consisting of a straight ridge waveguide (RW) section and a tapered gain-region. The RW…
Comparison of 650 nm tapered lasers with different lateral geometries at output powers up to 1 W
/forschung/publikationen/comparison-of-650nbspnm-tapered-lasers-with-different-lateral-geometries-at-output-powers-up-to-1nbspw
650 nm tapered laser diodes with nearly diffraction limited beam quality are requested for laser display applications. In this paper, results for 2 mm long 650 nm tapered lasers diodes…
Catastrophic optical mirror damage in diode lasers monitored during single pulse operation
/forschung/publikationen/catastrophic-optical-mirror-damage-in-diode-lasers-monitored-during-single-pulse-operation-1
The catastrophic optical mirror damage (COMD) effect is analyzed for 808 nm emitting diode lasers in single-pulse operation. During each single pulse, both nearfield of the laser emission and thermal…
Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers
/forschung/publikationen/imaging-catastrophic-optical-mirror-damage-in-high-power-diode-lasers
We image catastrophic optical mirror damage (COMD) in red- and infraredemitting high-power broad-area diode lasers by combining highly COMD-selective thermography, near-field imaging, scanning…
Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers
/forschung/publikationen/root-cause-analysis-of-peak-power-saturation-in-pulse-pumped-1100nbspnm-broad-area-single-emitter-diode-lasers
Many physical effects can potentially limit the peak achievable output power of single emitter broad area diode lasers under high current, pulse-pumped operation conditions. Although previous studies…
Study of the properties of the SHG with diode lasers
/forschung/publikationen/study-of-the-properties-of-the-shg-with-diode-lasers
An experimental study of the second-harmonic generation (SHG) properties with nondiffraction-limited radiation is presented. This includes the dependency of the normalized conversion efficiency on…
Electric probe investigations of microwave generated, atmospheric pressure, plasma jets
/forschung/publikationen/electric-probe-investigations-of-microwave-generated-atmospheric-pressure-plasma-jets
We examine the applicability of the Langmuir-type of characterization for atmospheric pressure plasma jets generated in a millimeter-size cavity microwave resonator at 2.45 GHz. Wide range I-V…
Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells
/forschung/publikationen/effects-of-low-charge-carrier-wave-function-overlap-on-internal-quantum-efficiency-in-gainn-quantum-wells
To determine relevant processes affecting the internal quantum efficiency in GaInN quantum well structures, we have studied the temperature and excitation power dependent photoluminescence intensity…
Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes
/forschung/publikationen/time-resolved-studies-of-catastrophic-optical-mirror-damage-in-red-emitting-laser-diodes
We have observed the changing light intensity during catastrophic optical mirror damage (COMD) on the timescale of tens of nanoseconds using red-emitting AlGaInP quantum well based laser diodes.…
Shifted Excitation Resonance Raman Difference Spectroscopy using a Microsystem Light Source at 488 nm
/forschung/publikationen/shifted-excitation-resonance-raman-difference-spectroscopy-using-a-microsystem-light-source-at-488-nm
Experimental results in shifted excitation resonance Raman difference spectroscopy (SERRDS) at 488 nm will be presented. A novel compact diode laser system was used as excitation light source. The…