Direktlink:

  1. Ferdinand-Braun-Institut
  2. Forschung
  3. Publikationen
  4. Engineered linearity of GaN-ba ...

Publikationen

Konferenzbeiträge - bei Terminen
Eine Reihe von Hochformatbroschüren ist aufrecht angeordnet. Die Cover zeigen Titel und Informationen zu verschiedenen Themen.

Dissertationen
Collage aus mehreren Patentschriften aus verschiedenen Ländern, darunter Deutschland, die USA und Japan. Es werden Informationen wie Aktenzeichen, Anmeldedaten und Patentnummern präsentiert.

Patente

Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

E. Bahat-Treidel, I. Khalil, O. Hilt, J. Würfl, and G. Tränkle

Published in:

phys. stat. sol. (c), vol. 6, no. 6, pp. 1378-1381 (2009).

Abstract:

This paper presents an innovative method of increasing inherent linearity of GaN/AlGaN HEMT by tailoring the effective transconductance. The effective transconductance of the whole device is tailored by optimizing individual transconductance of subunits of the device. In this work GaN HEMT units were individually optimized with different recess depth. The unit cells with different recess dept were optimized such a way so that the resultant transfer characteristic is suitable for high linearity.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

PACS:

73.40.Kp, 73.61.Ey, 85.30.De, 85.30.Tv

© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Full version in pdf-format.