Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam quality
F. Dittmar, B. Sumpf, G. Erbert and G. Tränkle
Published in:
Semicond. Sci. Technol., vol. 22, no. 4, pp. 374-379 (2007).
Abstract:
Long-term ageing tests of 808 nm tapered diode lasers with tensile-strained GaAsP quantum wells embedded in AlGaAs waveguides are presented. The lasers have been aged over 7200 h at an output power of 2 W in continuous-wave operation. The experiments demonstrate a low degradation rate of 1.3 × 10-5 h-1 as well as high stability of the beam quality. The high long-term reliability of operation combined with stable beam quality makes these lasers promising for new industrial applications.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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