650 nm InGaP broad area lasers with 5000 h reliable operation at 600 mW
B. Sumpf, M. Zorn, R. Staske, J. Fricke, A. Ginolas, K. Häusler, W. Pittroff, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
Published in:
IEEE Photonics Technol. Lett., vol. 19, no. 2, pp. 118-120 (2007).
Abstract:
Reliable operation of 650-nm broad area laser diodes with InGaP quantum-wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. Mounted on chemical vapor deposition (CVD)-diamond heat spreader and standard C-mounts, the 100-µm stripe width lasers showed reliable operation over 5000 h at 15 °C and 600 mW.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Index Terms:
Continuous-wave (CW) lasers, laser reliability, red lasers, semiconductor lasers.
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