808 nm tapered diode lasers optimised for high output power and nearly diffraction-limited beam quality in pulse mode operation
O.B. Jensena, A. Klehrb, F. Dittmarb, B. Sumpfb, G. Erbertb, P.E. Andersena and P.M. Petersena
Published in:
Proc. SPIE, vol. 6456, no. 64560A (2007).
Abstract:
808 nm tapered lasers have been investigated under current pulsing conditions without thermal load. The pulse length was 100 ns. The lasers are based on a super-large optical cavity structure with a very small vertical divergence angle of 18° (FWHM). The output power, beam quality and spectral behavior of the lasers were measured. Resonator geometries with different ridge waveguide lengths and taper angles were used for the optimisation of output power and beam quality. As a result, 27 W output power has been achieved. Nearly diffraction-limited beam quality up to 9 W has been obtained with an optimised lateral geometry. At even higher power, spectral broadening and beam quality degradation of the lasers were observed.
a Risø National Laboratory, Optics and Plasma Research Department, Frederiksborgvej 399, Dk-4000 Roskilde, Denmark
b Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Keywords:
Semiconductor laser, tapered diode laser, pulsed laser, beam quality, high brightness .
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