M. Rudolph, P. Heymann

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., Honolulu, HI, Jun. 3-8, pp. 1783-1786 (2007).

Abstract:

Accurate RF noise modeling of heterojunction bipolar transistors requires a proper model for the correlation of the shot-noise sources based on the respective time constant. This is incompatible with the present large-signal models, which, therefore, rely on non-correlated shot-noise sources and are not capable of predicting the RF noise with sufficient accuracy. In this paper, we propose a new configuration of the shot-noise sources which approximates the correlation by taking advantage of the large-signal model's equivalent circuit topology. The model is verified by measurements.

Index Terms:

Heterojunction bipolar transistor, semiconductor device modeling, equivalent circuit, Noise, Semiconductor device noise, Shot noise, White noise.

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