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Micromodules against microplastic pollution
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We’ve developed a novel micro-integrated quantum interferometer module, using entangled photons to detect microplastics in water. This compact, efficient technology enables mobile, cost-effective…
IWUMD 2025
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Wir sind mit mehreren Beiträgen beim 8. International Workshop on Ultra-Wide Bandgap Materials and Devices vertreten.
MNE 2025
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Das FBH präsentiert bei der 51st International Micro and Nano Engineering Conference neueste Forschungsergebnisse.
NUSOD 2025
/termine/nusod-2025
Das FBH ist mit einer Keynote bei der Conference on Numercial Simulation of Optoelectronic Devices 2025 vertreten.
Controlled Formation of Skyrmion Bags
/forschung/publikationen/controlled-formation-of-skyrmion-bags
Topologically non-trivial magnetic solitons are complex spin textures with a distinct single-particle nature. Although magnetic skyrmions, especially those with unity topological charge, have…
Ultraviolet-C Vertical-Cavity Surface-Emitting Lasers with Precise Cavity Length Control
/forschung/publikationen/ultraviolet-c-vertical-cavity-surface-emitting-lasers-with-precise-cavity-length-control
In vertical-cavity surface-emitting lasers (VCSELs), the cavity length defines the resonance wavelength, which is directly related to the laser detuning, that is, the difference between resonance…
Phonon–plasmon coupled modes in GaN vertical power structures: Carrier concentration and mobility analysis
/forschung/publikationen/phonon-plasmon-coupled-modes-in-gan-vertical-power-structures-carrier-concentration-and-mobility-analysis
Confocal Raman microscopy is proposed as a non-invasive method for determining carrier density and mobility in GaN structures used in vertical power devices. The electronic properties of two GaN…
Vertical GaN-on-Tungsten High Voltage pn-Diodes
/forschung/publikationen/vertical-gan-on-tungsten-high-voltage-pn-diodes
In this study, we present vertical GaN based pn-diodes designed for high-voltage applications. These devices were initially grown and processed on 4-inch sapphire substrates and subsequently…
Vertical GaN Trench MOSFETs with HfO2 / Al2O3 Layered Gate Dielectric
/forschung/publikationen/vertical-gan-trench-mosfets-with-hfo2-al2o3-layered-gate-dielectric
In this study, vertical GaN trench MOSFETs were fabricated utilizing a novel gate dielectric composed of hafnium oxide (HfO2) layered with aluminum oxide (Al2O3) to enhance device performance…
DBR Lasers at 679.29 and 707.20 nm for Efficient Repumping in Sr Optical Lattice Clocks
/forschung/publikationen/dbr-lasers-at-67929-and-70720-nm-for-efficient-repumping-in-sr-optical-lattice-clocks
We have developed and characterized DBR lasers emitting at 679 nm and 707 nm, specifically tailored to excite the repumping wavelengths in Sr optical lattice clocks. They achieve a FWHM…