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Technology of GaAs-Based MMICs for High Temperature Applications
/forschung/publikationen/technology-of-gaas-based-mmics-for-high-temperature-applications
A GaAs MESFET technology for the fabrication of devices specially developed for continuous, reliable operation at high temperatures is presented. The technology is based on highly stable ohmic and Sch
High Temperature MESFET-Based Integrated Circuits Operating up to 300°C
/forschung/publikationen/high-temperature-mesfet-based-integrated-circuits-operating-up-to-300c
A GaAs MESFET technology for the fabrication of devices for reliable operation at high temperatures is presented. The technology is based on highly stable ohmic and Schottky contacts containing WSiN d
Effect of heavy Ga doping on defect structure of SnO2 layers
/forschung/publikationen/effect-of-heavy-ga-doping-on-defect-structure-of-sno2-layers
Crystal defects in Ga-doped SnO2 grown on SnO2 buffer layers on r-plane sapphire by plasma-assisted molecular beam epitaxy have been analysed by transmission electron microscopy (TEM). The (101)-orien
Polarization of photoluminescence emission from semi-polar (11-22) AlGaN layers
/forschung/publikationen/polarization-of-photoluminescence-emission-from-semi-polar-11-22-algan-layers
We studied the optical polarization of surface-emitted photoluminescence from thick semi-polar (11-22) AlxGa1-xN layers on m-plane sapphire substrates with aluminum contents x between 0.0 and 0.63 at
Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
/forschung/publikationen/performance-characteristics-of-uv-c-algan-based-lasers-grown-on-sapphire-and-bulk-aln-substrates
The performance characteristics of optically pumped laser heterostructures emitting in the UV-C spectral range between 272 and 279nm are investigated. The laser heterostructures were grown by metal-or
MOVPE growth of AlxGa1-xN with x ∼ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV-LEDs
/forschung/publikationen/movpe-growth-of-alxga1-xn-with-x-05-on-epitaxial-laterally-overgrown-alnsapphire-templates-for-uv-leds
The crystalline perfection of AlxGa1-xN layers with Al content of x ∼ 0.5 on epitaxial laterally overgrown (ELO) AlN with low defect density was investigated by spatially and spectrally reso
Solar-blind AlxGa1-xN MSM photodetectors on patterned AlN/sapphire templates with 0.4 < x < 1
/forschung/publikationen/solar-blind-alxga1-xn-msm-photodetectors-on-patterned-alnsapphire-templates-with-04-lt-x-lt-1
Solar-blind Schottky-type metal-semiconductor-metal (MSM) photodetectors (PDs) based on AlxGa1-xN absorber layers with x varying between 0.4 and 1 are investigated. The impact of the epitaxial lateral
Anisotropic Responsivity of AlGaN Metal-Semiconductor-Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates
/forschung/publikationen/anisotropic-responsivity-of-algan-metal-semiconductor-metal-photodetectors-on-epitaxial-laterally-overgrown-alnsapphire-templates
Al0.4Ga0.6N metal-semiconductor-metal photodetectors on epitaxial laterally overgrown (ELO) AlN/sapphire templates show anisotropic device characteristics depending on the orientation of the electrode
Compact green-diode-based lasers for biophotonic bioimaging
/forschung/publikationen/compact-green-diode-based-lasers-for-biophotonic-bioimaging
Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.
Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
/forschung/publikationen/influence-of-barrier-growth-schemes-on-the-structural-properties-and-thresholds-of-ingan-quantum-well-laser-diodes
The influence of the (In)GaN quantum barrier growth temperature on the structural properties of the active region of blue-violet laser diodes has been investigated. Therefore, multiple quantum well st