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Publikationen
/forschung/publikationen/quotcomposition-fluctuations-in-ingaasp-single-layers-and-laser-structures-based-on-gaasquot
XRD investigations of WSiN and LaB6 Layers on GaAs
/forschung/publikationen/xrd-investigations-of-wsin-and-lab6-layers-on-gaas
The microstructures of WSiN and LaB6 thin layers (amorphous or crystalline) on GaAs substrates are studied in dependence on the deposition and annealing treatments by means of the TFXRD parallel-beam
XTEM investigation of Ge/Pd shallow contact to p-In0.53Ga0.47As
/forschung/publikationen/xtem-investigation-of-gepd-shallow-contact-to-p-in053ga047as
Cross-sectional transmission electron microscopy, in combination with energy dispersive X-ray spectroscopy and focused beam microdiffraction, was applied to study the solid-state reactions taking plac
Shallow and low-resistive contacts to p-In0.53Ga0.47As based on Pd/Sb and Pd/Ge metallisations
/forschung/publikationen/shallow-and-low-resistive-contacts-to-p-in053ga047as-based-on-pdsb-and-pdge-metallisations
Ohmic contacts on moderately doped In0.53Ga0.47As (p = 4 × 1018cm3) have been prepared using Pd/Zn/Sb/Pd and Pd/Zn/Pd/Ge metallisations. Low contact resistivities have been achieved, i.e. 3-7 × 10-7Ωc
Publikationen
/forschung/publikationen/pdznpdau-and-pdznaulab6au-ohmic-contacts-to-p-type-in053ga047as
The resistivity and interfacial characteristics of Pd/Zn/Pd/Au and Pd/Zn/Au/LaB6/Au contacts to p-In0.53Ga0.47As have been investigated. Annealing of the contacts at 375-425 °C yielded a minimum
Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As
/forschung/publikationen/transmission-electron-microscopy-study-of-rapid-thermally-annealed-pdge-contacts-on-in053ga047as
Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction, a
He implant-damage isolation of MOVPE grown GaAs/InGaP/InGaAsP layers
/forschung/publikationen/he-implant-damage-isolation-of-movpe-grown-gaasingapingaasp-layers
4He+ has been implanted in MOVPE grown GaAs/InGaP/InGaAsP layers to obtain damage-isolation. The electrical properties and the thermal long-term stability of the implanted regions have been investigat