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Neu erschienen: frequent zu ultra-widebandgap semiconductor devices
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Die neue Ausgabe der frequent beschäftigt sich mit aktuellen FBH-Entwicklungen, die auf Wide-Bandgap und Ultra-Widebandgap Halbleitern basieren - und ihre zentrale Rolle wenn es darum geht, den…
Brightness and efficiency scaling of a 1 kW, 780 nm diode laser module for additive manufacturing of aluminum
/forschung/forschungsnews/brightness-and-efficiency-scaling-of-a-1-kw-780-nm-diode-laser-module-for-additive-manufacturing-of-aluminum
We successfully demonstrate industrial 3D-printing of metal test structures in the factory, using a direct-diode high-power laser module that supplies 1 kW continuous wave power at 780 nm…
Ultra-stabile optische Systeme für mobile atomare Quantentechnologien – Publikation in Optics Express als Editor's Pick ausgewählt
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Unsere aktuelle Publikation „Micro-integrated crossed-beam optical dipole trap system with long-term alignment stability for mobile atomic quantum technologies“ wurde in der aktuellen Ausgabe von…
mmWave active load-pull for RF power transistor optimization
/forschung/forschungsnews/mmwave-active-load-pull-for-rf-power-transistor-optimization
Our 5G-MIMO measurement system uses active load-pull for precise impedance matching, optimizing transistor performance under large-signal CW excitation. The vector-corrected, on-wafer system enhances…
Joint Lab Electromagnetic Fields
/ueber-uns/struktur/labs-departments/iii/v-elektronik/joint-lab-electromagnetic-fields
Im Joint Lab Electromagnetic Fields kooperieren wir mit der Gruppe von Prof. Dr.-Ing. Thomas Flisgen, Professur für Theoretische Elektrotechnik an der Brandenburgischen Technischen Universität…
Compact light control unit for use in a low-SWaP strontium optical atomic clock
/forschung/forschungsnews/compact-light-control-unit-for-use-in-a-low-swap-strontium-optical-atomic-clock
Using FBH’s unique hybrid micro-integration technology, we realized a compact light control unit for laser beam conditioning in a transportable strontium-based optical atomic clock. Equipped with…
Improved stability of InGaN-based laser diodes by overcoming facet degradation
/forschung/forschungsnews/improved-stability-of-ingan-based-laser-diodes-by-overcoming-facet-degradation
Blue-violet emitting laser diodes tend to form SiOx deposits on the facet, causing unstable laser thresholds and beam characteristics. A suited facet coating, together with a hermetically sealed TO…
Exploration of high-temperature PECVD SiNx for strain engineering of GaN-HEMTs
/forschung/forschungsnews/exploration-of-high-temperature-pecvd-sinx-for-strain-engineering-of-gan-hemts
We demonstrate that high-temperature PECVD SiNx passivation layers enable controlled stress engineering in GaN-HEMTs. Our approach specifically shifts the threshold voltage up to 1.4 V, supporting…
Optical metrology for efficient manufacturing of high-quality VCSELs
/forschung/forschungsnews/optical-metrology-for-efficient-manufacturing-of-high-quality-vcsels
Using in-situ and ex-situ optical metrology, we have optimized VCSEL growth and etching processes. This ensures precise layer control, aligning emission wavelengths efficiently and enabling “first…
Advancing high-frequency communication: Scaled InP HBT transistors with fmax> 500 GHz
/forschung/forschungsnews/advancing-high-frequency-communication-scaled-inp-hbt-transistors-with-fmax-500-ghz
We have developed a highly scalable 400 nm InP HBT process with fmax> 500 GHz. The technology offers precise control, consistent performance, and improved efficiency, contributing to…