Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer
/forschung/publikationen/234-nm-far-ultraviolet-c-light-emitting-diodes-with-polarization-doped-hole-injection-layer
Far-ultraviolet-C (far-UVC) light-emitting diodes (LEDs) with an emission wavelength of 234 nm with different polarization-doped AlGaN hole injection layers (HILs) are compared regarding their…
Low-loss SH-propagation in nanoscale AlGaAs-on-insulator waveguides for nonlinear quantum light sources operating with telecom wavelengths
/forschung/publikationen/low-loss-sh-propagation-in-nanoscale-algaas-on-insulator-waveguides-for-nonlinear-quantum-light-sources-operating-with-telecom-wavelengths
We report unprecedentedly low second harmonic band propagation losses in highly nonlinear AlGaAs-on-insulator waveguides pumped in the telecom L-band. These findings pave the way towards parametric…
Improvement of Lifetime of Semiconductor Optical Amplifiers for BECCAL
/forschung/publikationen/improvement-of-lifetime-of-semiconductor-optical-amplifiers-for-beccal
Improved laser facet passivation suppresses catastrophic optical mirror damage in 1064 nm and 767 nm ridge waveguide amplifiers. Accelerated lifetests reveal a reliability of more than 99% over the…
Carrier Non-pinning at Stripe Edges and Widened Far field in Broad-Area Lasers due to Longitudinal Temperature Variation
/forschung/publikationen/carrier-non-pinning-at-stripe-edges-and-widened-far-field-in-broad-area-lasers-due-to-longitudinal-temperature-variation
2D-in-plane spontaneous emission studies reveal lateral carrier-non-pinning linked to longitudinal temperature variation in 9xx-nm broad-area-lasers. Front-side non-pinning at the stripe edges…
Investigations on Amplification of Feedback in Single-Mode Ridge Waveguide Optical Amplifiers at 767nm
/forschung/publikationen/investigations-on-amplification-of-feedback-in-single-mode-ridge-waveguide-optical-amplifiers-at-767nm
We present an experimental setup to investigate the sensitivity of ridge waveguide semiconductor optical amplifiers to optical feedback. We determine the amplification in forward and backward…
Mechanical Simulation of A Hybrid Micro-Integrated Diode Laser Module Developed for Space-Borne Application
/forschung/publikationen/mechanical-simulation-of-a-hybrid-micro-integrated-diode-laser-module-developed-for-space-borne-application
We present the mechanical simulations of a compact laser module intended for space-borne application on a small satellite. The device is designed to withstand the 10+ grms random vibration without…
Bragg Grating Based Frequency Reference Module for Operation in Quantum Technology Applications
/forschung/publikationen/bragg-grating-based-frequency-reference-module-for-operation-in-quantum-technology-applications
We present the design of a novel Bragg grating based frequency reference with an expected frequency accuracy of 50MHz and a tuning range of more than 20GHz optimized for potassium-based quantum…
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques
/forschung/publikationen/trapping-in-al2o3gan-moscaps-investigated-by-fast-capacitive-techniques
We present a detailed investigation of charge trapping processes in Al2O3/GaN vertical MOS capacitors, detected by means of advanced capacitance measurements. The devices stressed at positive bias…
Optimization of Iridium RF-Sputter Process for AlGaN/GaN-based HEMT Gate Technology
/forschung/publikationen/optimization-of-iridium-rf-sputter-process-for-algangan-based-hemt-gate-technology
Sputtered iridium films are the key element of FBH´s unique Schottky metal gate technology for AlGaN/GaN HEMT devices. Due to the piezoelectric properties of the AlGaN/GaN system, the metal…
Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices
/forschung/publikationen/drift-region-epitaxy-development-and-characterization-for-high-blocking-strength-and-low-specific-resistance-in-vertical-gan-based-devices
We demonstrate parallel plane junction (avalanche) and punch through one dimensional pn-diodes grown on sapphire substrates and compare the results to the GaN breakdown voltage values as a function…