Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Kilowatt-class, 1-cm diode laser bars at 910-940 nm with improved power, conversion efficiency and beam quality
/forschung/publikationen/kilowatt-class-1-cm-diode-laser-bars-at-910-940-nm-with-improved-power-conversion-efficiency-and-beam-quality
Kilowatt-class, 1-cm diode laser bars at 910-940 nm with improved power, conversion efficiency and beam quality Md.J. Miah, A. Boni, D. Martin, A. Knigge,…
On-site shifted excitation Raman difference spectroscopy for soil investigations
/forschung/publikationen/on-site-shifted-excitation-raman-difference-spectroscopy-for-soil-investigations
On-site shifted excitation Raman difference spectroscopy for soil investigations M. Maiwald, K. Sowoidnich, B. Sumpf Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für…
Diode laser based light sources for shifted excitation resonance Raman difference spectroscopy in the spectral range between 450 nm and 532 nm
/forschung/publikationen/diode-laser-based-light-sources-for-shifted-excitation-resonance-raman-difference-spectroscopy-in-the-spectral-range-between-450-nm-and-532-nm
Diode laser based light sources for shifted excitation resonance Raman difference spectroscopy in the spectral range between 450 nm and 532 nm B. Sumpf, A. Müller, M. Braune,…
Compact plug and play optical frequency reference device based on Doppler-free spectroscopy of rubidium vapor
/forschung/publikationen/compact-plug-and-play-optical-frequency-reference-device-based-on-doppler-free-spectroscopy-of-rubidium-vapor
Compactness, robustness and autonomy of optical frequency references are prerequisites for reliable operation in mobile systems, on ground as well as in space. We present a standalone plug and play…
High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes
/forschung/publikationen/high-quality-algan-epitaxy-on-lattice-engineerable-aln-template-for-high-power-uvc-light-emitting-diodes
AlGaN-based UVC light-emitting diodes (LED) were fabricated on high-quality AlN templates with an engineerable in-plane lattice constant. The controllability of the in-plane strain originated from…
Optical Feedback Generated by Tapered Amplifiers Emitting at 1120 nm
/forschung/publikationen/optical-feedback-generated-by-tapered-amplifiers-emitting-at-1120-nm
In this work the optical feedback generated by a tapered amplifier (TPA) emitting at 1120 nm is characterized at different operational conditions. The TPA is operated in a master oscillator…
Detection of calcium phosphate species in soil by confocal µ-Raman spectroscopy
/forschung/publikationen/detection-of-calcium-phosphate-species-in-soil-by-confocal-micro-raman-spectroscopy
Background: Raman spectroscopy is a promising but largely underexplored tool for the detection of phosphates (P) in soil. Although it requires minimal sample preparation, it has been demonstrated…
Au-Free Ohmic Contact for GaN High-Electron-Mobility Transistors
/forschung/publikationen/au-free-ohmic-contact-for-gan-high-electron-mobility-transistors-1
Herein, the fabrication of Au-free ohmic contacts for mm-wave GaN heterojunction field-effect transistors is investigated. To find an optimum metal stack and annealing recipe, different metallization…
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling
/forschung/publikationen/logarithmic-trapping-and-detrapping-in-beta-ga2o3-mosfets-experimental-analysis-and-modeling
In this paper, we extensively characterize and model the threshold voltage instability in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric. Specifically, (i) the results indicate that the…
Passively Q-switched microchip laser based picosecond light source in the visible-red to near-infrared band for semiconductor excitation
/forschung/publikationen/passively-q-switched-microchip-laser-based-picosecond-light-source-in-the-visible-red-to-near-infrared-band-for-semiconductor-excitation
We developed a visible-red to near-infrared wavelength tunable all-solid-state laser system utilizing an optical parametric generation process in a MgO doped PPLN crystal pumped at 532 nm by an…