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Capture Time as a Limit to Pulsed Power in 940 nm Broad Area Diode Lasers
/forschung/publikationen/capture-time-as-a-limit-to-pulsed-power-in-940-nm-broad-area-diode-lasers-1
Measurement and simulation of 940 nm lasers with strongly varied confinement factor in the quantum well are presented. The observed power saturation is little affected by confinement, instead…
Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions
/forschung/publikationen/picosecond-laser-excited-photoluminescence-study-of-algan-quantum-wells-on-epitaxially-laterally-overgrown-alnsapphire-under-selective-and-non-selective-excitation-conditions
The radiative recombination efficiency (RRE) of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire templates was investigated by picosecond-laser–excited photoluminescence (PL)…
Radiofrequency Electromagnetic Fields Cause Non-Temperature-Induced Physical and Biological Effects in Cancer Cells
/forschung/publikationen/radiofrequency-electromagnetic-fields-cause-non-temperature-induced-physical-and-biological-effects-in-cancer-cells
Non-temperature-induced effects of radiofrequency electromagnetic fields (RF) have been controversial for decades. Here, we established measurement techniques to prove their existence by…
Compact, Watt-class 785 nm dual-wavelength master oscillator power amplifiers
/forschung/publikationen/compact-watt-class-785-nm-dual-wavelength-master-oscillator-power-amplifiers
785 nm micro-integrated, dual-wavelength master oscillator power amplifiers with a footprint of 5 mm × 25 mm are presented. They are based on Y-branch distributed Bragg…
Experimental Studies into the Beam Parameter Product of GaAs High-Power Diode Lasers
/forschung/publikationen/experimental-studies-into-the-beam-parameter-product-of-gaas-high-power-diode-lasers-1
Experimental studies into the beam parameter product (BPP) of 940–980 nm GaAs-based high-power diode lasers are presented. Such lasers exhibit broadening far field and narrowing near field…
Comparative Study of Monolithic Integrated MMI-Coupler-Based Dual-Wavelength Lasers
/forschung/publikationen/comparative-study-of-monolithic-integrated-mmi-coupler-based-dual-wavelength-lasers-1-1
We present AlGaAs-based monolithically integrated dual-wavelength lasers and master-oscillator power-amplifiers emitting around 785 nm which combine a near diffraction limited beam qualitywith…
Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs
/forschung/publikationen/impact-of-operation-parameters-on-the-degradation-of-233-nm-algan-based-far-uvc-leds
The impact of the operation parameters current and temperature on the degradation of AlGaN-based 233 nm far-ultraviolet-C LEDs is investigated. The observed effects can be divided into two…
Planar refractive index patterning through microcontact photo-thermal annealing of a printable organic/inorganic hybrid material
/forschung/publikationen/planar-refractive-index-patterning-through-microcontact-photo-thermal-annealing-of-a-printable-organicinorganic-hybrid-material-1
We demonstrate proof-of-concept refractive-index structures with large refractive-index-gradient profiles, using a micro-contact photothermal annealing (µCPA) process to pattern…
Internally wavelength stabilized 910 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
/forschung/publikationen/internally-wavelength-stabilized-910-nm-diode-lasers-with-epitaxially-stacked-multiple-active-regions-and-tunnel-junctions-1
We present a multi-active-region bipolar-cascade distributed-Bragg reflector (DBR) laser emitting around 910 nm. The three active regions and two tunnel junctions are located in a single…
Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers
/forschung/publikationen/impact-of-si-doping-on-dislocation-behavior-in-movpe-grown-aln-on-high-temperature-annealed-aln-buffer-layers
In this work, we compare the defect structure in unintentionally doped and Si-doped AlN layers grown by metalorganic vapor phase epitaxy (MOVPE) on high-temperature annealed (HTA) sputtered AlN…