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Towards tunable graphene phononic crystals
/forschung/publikationen/towards-tunable-graphene-phononic-crystals
Phononic crystals (PnCs) are artificially patterned media exhibiting bands of allowed and forbidden zones for phonons — in analogy to the electronic band structure of crystalline solids arising from…
A Dual-Species Atom Interferometer Payload for Operation on Sounding Rockets
/forschung/publikationen/a-dual-species-atom-interferometer-payload-for-operation-on-sounding-rockets
We report on the design and the construction of a sounding rocket payload capable of performing atom interferometry with Bose-Einstein condensates of 41K and 87Rb. The apparatus is designed to be…
Skin optical properties from 200 to 300 nm support far UV-C skin-safety in vivo
/forschung/publikationen/skin-optical-properties-from-200-to-300-nm-support-far-uv-c-skin-safety-in-vivo
The growing threat of multi-drug resistant pathogens and airborne microbial diseases has highlighted the need to improve or develop novel disinfection methods for clinical environments. Conventional…
The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs
/forschung/publikationen/the-role-of-gate-leakage-on-surface-related-current-collapse-in-algangan-hemts
The parasitic gate tunnelling of electrons into surface traps is shown to be responsible for the current collapse in GaN high electron mobility transistors. Simulations with and without surface traps…
Design and Analysis of a 50 GHz InP DHBT Class-E Power Amplifier Providing 2.3 mW/µm2
/forschung/publikationen/design-and-analysis-of-a-50-ghz-inp-dhbt-class-e-power-amplifier-providing-23-mwmicrom2
For the commercial success of mm-wave 5G technologies, there is a need for high-output power and efficient power amplifier systems. In this paper, we demonstrate the capability of InP DHBT devices at…
A Full G-band Power Amplifier with 34% Peak PAE in InP-DHBT Technology
/forschung/publikationen/a-full-g-band-power-amplifier-with-34-peak-pae-in-inp-dhbt-technology
This paper presents a highly efficient full G-band power amplifier (PA) using 500 nm InP-DHBT technology. It consists of 3 stages using a cascade unit power cell. Measurements show in average…
Heterointegration of mm-Wave InP-HBT Power Amplifier Chiplets on SiGe-BiCMOS Chip
/forschung/publikationen/heterointegration-of-mm-wave-inp-hbt-power-amplifier-chiplets-on-sige-bicmos-chip
In this paper we demonstrate InP chiplet heterointegration on SiGe-BiCMOS carriers for mm-wave applications. A flip-chip type of assembly with indium-based microbumps allows for seamless integration…
Wideband Automated Tuning of Ka-Band Dual Input Doherty MMIC PA using Bayesian Optimization
/forschung/publikationen/wideband-automated-tuning-of-ka-band-dual-input-doherty-mmic-pa-using-bayesian-optimization
Two automated procedures based on Bayesian optimization are used to search for the optimal input splitting and the optimal multi-stage gate biasing of a dual input Doherty MMIC PA in 150-mm…
Dynamic RD Modeling by Exploiting Gate Current Dependency of Virtual Gate Effect
/forschung/publikationen/dynamic-rd-modeling-by-exploiting-gate-current-dependency-of-virtual-gate-effect
This paper proposes a new method for compact modeling the virtual gate effect by adapting the gate current in the extraction procedure. Drain resistance (RD) of gallium nitride (GaN)…
On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier
/forschung/publikationen/on-the-survivability-of-a-28-32-ghz-gan-low-noise-amplifier
This paper presents a 28 - 32 GHz 2-stage low noise amplifier (LNA). The LNA was designed and fabricated using Ferdinand-Braun-Institut’s (FBH) 0.15 µm GaN on SiC process. Three samples of…