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Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers
/forschung/publikationen/carrier-density-non-pinning-at-stripe-edges-and-widened-lateral-far-field-due-to-longitudinal-temperature-variation-in-broad-area-high-power-diode-lasers
Broad area lasers operating at high power with improved beam quality are needed in many applications. In typical high-power diode lasers with asymmetric facet coating, it is observed that the carrier…
Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1
/forschung/publikationen/enhancement-mode-vertical-100-b-ga2o3-finfets-with-an-average-breakdown-strength-of-27nbspmvnbspcm1
In this work, we report on the realization of vertical (100) β-Ga2O3 FinFET devices for the use in power electronics applications. The experiments are carried out on structures consisting of highly…
High-mobility 4 µm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression
/forschung/publikationen/high-mobility-4-microm-movpe-grown-100-beta-ga2o3-film-by-parasitic-particles-suppression
In this work, we comprehensively investigate the development of unwanted parasitic particles in the MOVPE chamber while growing µm level films. The density of the parasitic particles is found to be…
Role of Oxygen Incorporation in High Temperature Annealed AlGaN
/forschung/publikationen/role-of-oxygen-incorporation-in-high-temperature-annealed-algan
High-temperature annealing (HTA) is a powerful technique to decrease dislocation density in AlN, which can also be applied on AlGaN. This work investigates the impact of using sapphire and AlN as a…
10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer
/forschung/publikationen/10-a950-v-switching-of-gan-channel-hfets-with-non-doped-aln-buffer
AlN-based semiconductor devices are considered to outperform lateral AlGaN/GaN HFETs for power-electronic switching applications due to the high AlN-material breakdown field strength. We present an…
Shifted Excitation Raman Difference Spectroscopy Combined with Wide Area Illumination and Sample Rotation for Wood Species Classification
/forschung/publikationen/shifted-excitation-raman-difference-spectroscopy-combined-with-wide-area-illumination-and-sample-rotation-for-wood-species-classification
Raman spectroscopy has found its way into a wide range of applications and is successfully applied for qualitative and quantitative studies. Despite significant technical progress over the last few…
10 kHz Shifted-Excitation Raman Difference Spectroscopy with Charge-Shifting Charge-Coupled Device Read-Out for Effective Mitigation of Dynamic Interfering Backgrounds
/forschung/publikationen/10khz-shifted-excitation-raman-difference-spectroscopy-with-charge-shifting-charge-coupled-device-read-out-for-effective-mitigation-of-dynamic-interfering-backgrounds
In this work we demonstrate an advanced concept of a charge-shifting charge-coupled device (CCD) read-out combined with shifted excitation Raman difference spectroscopy (SERDS) capable of operating…
Enhanced light extraction efficiency of far-ultraviolet-C LEDs by micro-LED array design
/forschung/publikationen/enhanced-light-extraction-efficiency-of-far-ultraviolet-c-leds-by-micro-led-array-design
AlGaN-based far-UVC light emitting diodes (LEDs) with an emission wavelength of 233 nm were fabricated in the form of micro-LED arrays with emitter diameters ranging from 1.5 to 50 µm. The…
Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm
/forschung/publikationen/experimental-and-theoretical-studies-into-longitudinal-spatial-hole-burning-as-a-power-limit-in-high-power-diode-lasers-at-975-nm
Spatial-hole-burning as a limit to the continuous-wave (CW) output power of GaAs-based diode lasers is experimentally studied. For 90 µm stripe lasers with 6 mm resonator length and 0.8%…
Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing
/forschung/publikationen/ge-ion-implantation-and-activation-in-100-beta-ga2o3-for-ohmic-contact-improvement-using-pulsed-rapid-thermal-annealing
In this work, we analyze the optimum annealing conditions for the activation of Ge-implanted β-Ga2O3 in order to reach low ohmic contact resistances. The experiments involved the use of a pulsed…