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Impact of the capture time on power saturation of quantum-well diode lasers
/forschung/publikationen/impact-of-the-capture-time-on-power-saturation-of-quantum-well-diode-lasers
Injected electrons and holes are captured into quantum wells with a non-vanishing time. Simulation results are presented, showing that this results in a non-equilibrium of free and bound carriers in…
Simulation and analysis of high‑brightness tapered ridge‑waveguide lasers
/forschung/publikationen/simulation-and-analysis-of-high-brightness-tapered-ridge-waveguide-lasers-1
In this work, a simulation-based analysis of a CW-driven tapered ridge-waveguide laser design is presented. Measurements of these devices delivered high lateral brightness values of…
Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes
/forschung/publikationen/optimization-of-vertical-gan-drift-region-layers-for-avalanche-and-punch-through-pn-diodes
We optimized gallium nitride drift layers for high voltage and low resistance vertical electronic devices by tuning the doping concentration for a given thickness of 5 µm. The optimization…
Polymer surface functionalization using a new µ-wave driven atmospheric pressure plasma-jet device
/forschung/publikationen/polymer-surface-functionalization-using-a-new-micro-wave-driven-atmospheric-pressure-plasma-jet-device
A newly developed compact µ-wave plasma source was utilized for activating the surfaces of several polymers. A remarkable improvement of the surface adhesion was achieved. The plasma-treated surfaces…
Atomistic Simulations of Defects Production under Ion Irradiation in Epitaxial Graphene on SiC
/forschung/publikationen/atomistic-simulations-of-defects-production-under-ion-irradiation-in-epitaxial-graphene-on-sic
Using first-principles and analytical potential atomistic simulations, production of defects in epitaxial graphene (EG) on SiC upon ion irradiation for ion types and energies accessible in helium-ion…
Lateral Transistors on β-Ga2O3: Overview on Design, Technology, and Characterization
/forschung/publikationen/lateral-transistors-on-beta-ga2o3-overview-on-design-technology-and-characterization
This chapter reviews recent advances in the fabrication of lateral ß-Ga2O3 power transistors for high-voltage switching applications. In this regard, certain aspects in the design principles and…
Spatially resolved degradation effects in UVB LEDs stressed by constant current operation
/forschung/publikationen/spatially-resolved-degradation-effects-in-uvb-leds-stressed-by-constant-current-operation
InAlGaN-based UVB light-emitting diodes with an emission wavelength of 310 nm were operated at an elevated nominal current density of 200 A/cm2 and a heatsink temperature of 29°C. The…
Evaluation of Modern Approaches for the Assessment of Dietary Carotenoids as Markers for Fruit and Vegetable Consumption
/forschung/publikationen/evaluation-of-modern-approaches-for-the-assessment-of-dietary-carotenoids-as-markers-for-fruit-and-vegetable-consumption
The assessment of dietary carotenoids via blood measurements has been widely used as a marker for fruit and vegetable consumption. In the present study, modern, non-invasive approaches to assess…
Spectral behavior of high-power distributed feedback lasers
/forschung/publikationen/spectral-behavior-of-high-power-distributed-feedback-lasers
The mode hopping behavior of high-power distributed feedback lasers emitting near 780 nm is studied. The lasers have highly reflective rear and anti-reflection coated front facets. The influence…
High-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness
/forschung/publikationen/high-power-diode-lasers-with-in-situ-structured-lateral-current-blocking-for-improved-threshold-efficiency-and-brightness-1
We present high-power GaAs-based broad-area diode lasers with a novel variant of the enhanced self- aligned lateral structure ‘eSAS’, having a strongly reduced lasing threshold and improved peak…