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Operational Lifetime Qualification of Laser Diodes for BECCAL
/forschung/publikationen/operational-lifetime-qualification-of-laser-diodes-for-beccal
Operational Lifetime Qualification of Laser Diodes for BECCAL K. Häusler, A. Bawamia, J. Boschker, J.M. Baumann, M. Dammasch, H. Wenzel, A. Knigge, J. Fricke,…
In-orbit verification of an optical frequency reference on the ISS Bartolomeo platform
/forschung/publikationen/in-orbit-verification-of-an-optical-frequency-reference-on-the-iss-bartolomeo-platform
In-orbit verification of an optical frequency reference on the ISS Bartolomeo platform T. Schuldta, K. Abicha, T. Alama, J. Bischofa, T. Blomberga, L. Blümelb,…
Micro-integrated optical systems and qualification of adhesive integration technologies for cold atomic quantum sensors
/forschung/publikationen/micro-integrated-optical-systems-and-qualification-of-adhesive-integration-technologies-for-cold-atomic-quantum-sensors
Micro-integrated optical systems and qualification of adhesive integration technologies for cold atomic quantum sensors M. Christa,b, A. Stiekela,b, C. Stölmackera,…
Impact of Plasma Treatment of n-Al0.87Ga0.13N:Si Surfaces on V/Al/Ni/Au Contacts in Far-UVC LEDs
/forschung/publikationen/impact-of-plasma-treatment-of-n-al087ga013nsi-surfaces-on-valniau-contacts-in-far-uvc-leds
We investigated the effect of treating the surface of n-Al0.87Ga0.13N:Si by O2 or SF6 plasma on the properties of subsequently deposited and annealed V/Al/Ni/Au contacts. Whereas an O2 plasma…
Analysis of Mechanical Strain in AlGaN/GaN HFETs
/forschung/publikationen/analysis-of-mechanical-strain-in-algangan-hfets
Herein, the influence of mechanical strain induced by passivation layers on the electrical performance of AlGaN/GaN heterostructure field-effect transistor is investigated. We studied the physical…
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
/forschung/publikationen/radiative-recombination-and-carrier-injection-efficiencies-in-265nm-deep-ultraviolet-light-emitting-diodes-grown-on-alnsapphire-templates-with-different-defect-densities
The electro-optical characteristics of deep ultraviolet light-emitting diodes (DUV LEDs) emitting at 265 nm and grown on AlN/sapphire templates with different threading dislocation densities,…
Athermalization of the Lasing Wavelength in Vertical-Cavity Surface-Emitting Lasers
/forschung/publikationen/athermalization-of-the-lasing-wavelength-in-vertical-cavity-surface-emitting-lasers
A concept for vertical-cavity surface-emitting lasers (VCSELs) is proposed and demonstrated to obtain a lasing wavelength with unprecedented temperature stability. The concept is based on…
Data-Efficient Machine Learning Algorithms for the Design of Surface Bragg Gratings
/forschung/publikationen/data-efficient-machine-learning-algorithms-for-the-design-of-surface-bragg-gratings
Deep learning models, with a prerequisite of large databases, are common approaches in applying machine learning for inverse design in photonics. For these models, less expensive, approximate methods…
Silicon diffusion in AlN
/forschung/publikationen/silicon-diffusion-in-aln
In this study, we investigate the diffusion of Si donors in AlN. Amorphous Si1-xNx sputtered on the surface of bulk AlN with low dislocation density is used as a Si source. The diffusion experiments…
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric
/forschung/publikationen/gate-leakage-modeling-in-lateral-b-ga2o3-mosfets-with-al2o3-gate-dielectric
We present a detailed model of the static and dynamic gate leakage current in lateral β-Ga2O3 MOSFETs with an Al2O3 gate insulator, covering a wide temperature range. We demonstrate that (i) in the…