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Suchergebnisse 1691 bis 1700 von 5349

Investigation of astigmatism in tapered edge emitting diode amplifiers at 980 nm

/forschung/publikationen/investigation-of-astigmatism-in-tapered-edge-emitting-diode-amplifiers-at-980-nm

Investigation of astigmatism in tapered edge emitting diode amplifiers at 980 nm P. Hildenstein, N. Werner, K. Paschke, and G. Tränkle Ferdinand-Braun-Institut gGmbH,…

Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers

/forschung/publikationen/longitudinal-spatial-hole-burning-and-associated-non-uniform-current-and-carrier-density-profile-as-a-power-limit-in-high-power-diode-lasers

Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers S. Arslana, H. Wenzela, J. Frickea,…

Electrically wavelength adjustable DBR laser for background-free Raman spectroscopy at 785 nm

/forschung/publikationen/electrically-wavelength-adjustable-dbr-laser-for-background-free-raman-spectroscopy-at-785-nm

Electrically wavelength adjustable DBR laser for background-free Raman spectroscopy at 785 nm A. Müller, M. Maiwald and B. Sumpf Ferdinand-Braun-Institut gGmbH, Leibniz-Institut…

Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging

/forschung/publikationen/micro-electroluminescence-and-micro-photoluminescence-study-on-gan-based-laser-diode-aging

Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging L. Uhlig1, C. Becht1, E. Freier2, J.H. Kang2, V. Hoffmann2,…

Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs

/forschung/publikationen/conduction-properties-and-threshold-voltage-instability-in-beta-ga2o3-mosfets

Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs M. Fregolenta, E. Brusaterraa, C. De Santia, K. Tetznerb, J. Würflb,…

UV LED reliability: degradation mechanisms and challenges

/forschung/publikationen/uv-led-reliability-degradation-mechanisms-and-challenges

UV LED reliability: degradation mechanisms and challenges M. Meneghini1, F. Piva1, C. De Santi1, N. Trivellin1,2, M. Buffolo1, N. Roccato1, R. Brescancin1,…

Simulation of Optical Feedback Propagating through Tapered Amplifiers

/forschung/publikationen/simulation-of-optical-feedback-propagating-through-tapered-amplifiers

Simulation of Optical Feedback Propagating through Tapered Amplifiers N. Werner, P. Hildenstein, H. Wenzel, K. Paschke, and G. Tränkle Ferdinand-Braun-Institut gGmbH,…

Coherent beam combining progress on diode lasers and tapered amplifiers at 808 nm

/forschung/publikationen/coherent-beam-combining-progress-on-diode-lasers-and-tapered-amplifiers-at-808-nm

Coherent beam combining progress on diode lasers and tapered amplifiers at 808 nm C. Mourikisa, G. Blumea, A. Maaßdorfa, J. Frickea, K. Paschkea, G. Lucas-Leclinb…

High-brightness 1.4 kW 780 nm QCW laser pump module with low-loss coupling into 1 mm fiber up to 50 % duty cycle

/forschung/publikationen/high-brightness-14-kw-780-nm-qcw-laser-pump-module-with-low-loss-coupling-into-1-mm-fiber-up-to-50-duty-cycle

High-brightness 1.4 kW 780 nm QCW laser pump module with low-loss coupling into 1 mm fiber up to 50 % duty cycle M. Hübner, M. Wilkens, B. Eppich, P.S. Basler,…

Progress in Experimental Studies into the Beam Parameter Product of GaAs-based High-Power Diode Lasers

/forschung/publikationen/progress-in-experimental-studies-into-the-beam-parameter-product-of-gaas-based-high-power-diode-lasers

Progress in Experimental Studies into the Beam Parameter Product of GaAs-based High-Power Diode Lasers P. Crumpa, M. Elattara, Md.J. Miaha, M. Ekteraia, M.M. Karowa,…