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Investigations on Amplification of Feedback in Single-Mode Ridge Waveguide Optical Amplifiers at 767nm
/forschung/publikationen/investigations-on-amplification-of-feedback-in-single-mode-ridge-waveguide-optical-amplifiers-at-767nm
We present an experimental setup to investigate the sensitivity of ridge waveguide semiconductor optical amplifiers to optical feedback. We determine the amplification in forward and backward…
Mechanical Simulation of A Hybrid Micro-Integrated Diode Laser Module Developed for Space-Borne Application
/forschung/publikationen/mechanical-simulation-of-a-hybrid-micro-integrated-diode-laser-module-developed-for-space-borne-application
We present the mechanical simulations of a compact laser module intended for space-borne application on a small satellite. The device is designed to withstand the 10+ grms random vibration without…
Bragg Grating Based Frequency Reference Module for Operation in Quantum Technology Applications
/forschung/publikationen/bragg-grating-based-frequency-reference-module-for-operation-in-quantum-technology-applications
We present the design of a novel Bragg grating based frequency reference with an expected frequency accuracy of 50MHz and a tuning range of more than 20GHz optimized for potassium-based quantum…
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques
/forschung/publikationen/trapping-in-al2o3gan-moscaps-investigated-by-fast-capacitive-techniques
We present a detailed investigation of charge trapping processes in Al2O3/GaN vertical MOS capacitors, detected by means of advanced capacitance measurements. The devices stressed at positive bias…
Optimization of Iridium RF-Sputter Process for AlGaN/GaN-based HEMT Gate Technology
/forschung/publikationen/optimization-of-iridium-rf-sputter-process-for-algangan-based-hemt-gate-technology
Sputtered iridium films are the key element of FBH´s unique Schottky metal gate technology for AlGaN/GaN HEMT devices. Due to the piezoelectric properties of the AlGaN/GaN system, the metal…
Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices
/forschung/publikationen/drift-region-epitaxy-development-and-characterization-for-high-blocking-strength-and-low-specific-resistance-in-vertical-gan-based-devices
We demonstrate parallel plane junction (avalanche) and punch through one dimensional pn-diodes grown on sapphire substrates and compare the results to the GaN breakdown voltage values as a function…
Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers
/forschung/publikationen/carrier-density-non-pinning-at-stripe-edges-and-widened-lateral-far-field-due-to-longitudinal-temperature-variation-in-broad-area-high-power-diode-lasers
Broad area lasers operating at high power with improved beam quality are needed in many applications. In typical high-power diode lasers with asymmetric facet coating, it is observed that the carrier…
Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1
/forschung/publikationen/enhancement-mode-vertical-100-b-ga2o3-finfets-with-an-average-breakdown-strength-of-27nbspmvnbspcm1
In this work, we report on the realization of vertical (100) β-Ga2O3 FinFET devices for the use in power electronics applications. The experiments are carried out on structures consisting of highly…
High-mobility 4 µm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression
/forschung/publikationen/high-mobility-4-microm-movpe-grown-100-beta-ga2o3-film-by-parasitic-particles-suppression
In this work, we comprehensively investigate the development of unwanted parasitic particles in the MOVPE chamber while growing µm level films. The density of the parasitic particles is found to be…
Role of Oxygen Incorporation in High Temperature Annealed AlGaN
/forschung/publikationen/role-of-oxygen-incorporation-in-high-temperature-annealed-algan
High-temperature annealing (HTA) is a powerful technique to decrease dislocation density in AlN, which can also be applied on AlGaN. This work investigates the impact of using sapphire and AlN as a…