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Technology roadmap for cold-atoms based quantum inertial sensor in space
/forschung/publikationen/technology-roadmap-for-cold-atoms-based-quantum-inertial-sensor-in-space
Recent developments in quantum technology have resulted in a new generation of sensors for measuring inertial quantities, such as acceleration and rotation. These sensors can exhibit unprecedented…
Gallium Phosphide Nanowires Grown on SiO2 by Gas-Source Molecular Beam Epitaxy
/forschung/publikationen/gallium-phosphide-nanowires-grown-on-sio2-by-gas-source-molecular-beam-epitaxy
GaP as one of the III–V semiconductors has an indirect band gap in its natural zinc-blend (ZB) crystal phase, limiting its applications in optoelectronics. The atomic arrangements of the ZB GaP,…
Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs
/forschung/publikationen/impact-of-mg-doping-on-the-performance-and-degradation-of-algan-based-uv-c-leds
We investigate the impact of Mg-doping on the performance and degradation kinetics of AlGaN-based UV-C light-emitting diodes (LEDs). By comparing LEDs from three wafers with different nominal doping…
Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs
/forschung/publikationen/temperature-dependent-electroluminescence-of-stressed-and-unstressed-inalgan-multi-quantum-well-uvb-leds
The electroluminescence of UVB light-emitting diodes emitting at 310 nm before and after 1000 h of operation is studied in the temperature range from 20 to 340 K. Before operation, the…
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
/forschung/publikationen/modeling-the-electrical-degradation-of-algan-based-uv-c-leds-by-combined-deep-level-optical-spectroscopy-and-tcad-simulations
The long-term stability of ultraviolet (UV)-C light-emitting diodes (LEDs) is of major importance for many applications. To improve the understanding in this field, we analyzed the degradation of…
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
/forschung/publikationen/degradation-of-algan-based-uv-c-sqw-leds-analyzed-by-means-of-capacitance-deep-level-transient-spectroscopy-and-numerical-simulations
The lifetime of deep-ultraviolet light-emitting diodes (LEDs) is still limited by a number of factors, which are mainly related to semiconductor defects, and still need to be clarified. This paper…
234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer
/forschung/publikationen/234-nm-far-ultraviolet-c-light-emitting-diodes-with-polarization-doped-hole-injection-layer
Far-ultraviolet-C (far-UVC) light-emitting diodes (LEDs) with an emission wavelength of 234 nm with different polarization-doped AlGaN hole injection layers (HILs) are compared regarding their…
Low-loss SH-propagation in nanoscale AlGaAs-on-insulator waveguides for nonlinear quantum light sources operating with telecom wavelengths
/forschung/publikationen/low-loss-sh-propagation-in-nanoscale-algaas-on-insulator-waveguides-for-nonlinear-quantum-light-sources-operating-with-telecom-wavelengths
We report unprecedentedly low second harmonic band propagation losses in highly nonlinear AlGaAs-on-insulator waveguides pumped in the telecom L-band. These findings pave the way towards parametric…
Improvement of Lifetime of Semiconductor Optical Amplifiers for BECCAL
/forschung/publikationen/improvement-of-lifetime-of-semiconductor-optical-amplifiers-for-beccal
Improved laser facet passivation suppresses catastrophic optical mirror damage in 1064 nm and 767 nm ridge waveguide amplifiers. Accelerated lifetests reveal a reliability of more than 99% over the…
Carrier Non-pinning at Stripe Edges and Widened Far field in Broad-Area Lasers due to Longitudinal Temperature Variation
/forschung/publikationen/carrier-non-pinning-at-stripe-edges-and-widened-far-field-in-broad-area-lasers-due-to-longitudinal-temperature-variation
2D-in-plane spontaneous emission studies reveal lateral carrier-non-pinning linked to longitudinal temperature variation in 9xx-nm broad-area-lasers. Front-side non-pinning at the stripe edges…