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A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers
/forschung/publikationen/a-novel-system-for-recovery-time-measurements-of-gan-based-low-noise-amplifiers
A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the…
Characteristics of Diode Detectors for Six-Port Radars
/forschung/publikationen/characteristics-of-diode-detectors-for-six-port-radars
In recent times, six-port radar technology has been implemented for accurate phase measurements due to its low cost and easy implementation. This work focuses on various design aspects of a six-port…
A Compact Wide Coverage 0.7-1.5 GHz MEMS-based Impedance Tuner
/forschung/publikationen/a-compact-wide-coverage-07-15-ghz-mems-based-impedance-tuner
We propose a lumped element re-configurable impedance tuner with wide impedance coverage within the 0.7 - 1.5 GHz frequency band. The fabricated device is compact and the design is centered…
Formation of voids and their role in the recovery of sputtered AlN during hightemperature annealing
/forschung/publikationen/formation-of-voids-and-their-role-in-the-recovery-of-sputtered-aln-during-hightemperature-annealing
The structural recovery of AlN grown by reactive sputtering on a sapphire substrate during high-temperature annealing is studied by means of transmission electron microscopy and secondary ion mass…
Comparison of individual and common wavelength-operation for 785 nm Y-branch DBR ridge waveguide diode lasers with adjustable spectral distance
/forschung/publikationen/comparison-of-individual-and-common-wavelength-operation-for-785-nm-y-branch-dbr-ridge-waveguide-diode-lasers-with-adjustable-spectral-distance
An experimental comparison between individual and common wavelength-operation of a Y-branch distributed Bragg reflector (DBR) ridge waveguide (RW) laser at 785 nm with an electrically adjustable…
Linien: A versatile, user-friendly, open-source FPGA-based tool for frequency stabilization and spectroscopy parameter optimization
/forschung/publikationen/linien-a-versatile-user-friendly-open-source-fpga-based-tool-for-frequency-stabilization-and-spectroscopy-parameter-optimization
We present a user-friendly and versatile tool for laser frequency stabilization. Its main focus is spectroscopy locking, but the software is suitable for lock-in techniques in general as well as bare…
Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 762 nm for daylight imaging
/forschung/publikationen/micro-integrated-high-power-narrow-linewidth-external-cavity-tapered-diode-laser-at-762-nm-for-daylight-imaging
Solar radiation is a challenge for laser-based daylight imaging since it decreases the signal-to-noise ratio (SNR) of the imaging. Here we demonstrate a micro-integrated external-cavity tapered diode…
High Power Distributed Bragg Reflector Lasers at 689.45 nm for Quantum Technology Applications
/forschung/publikationen/high-power-distributed-bragg-reflector-lasers-at-68945-nm-for-quantum-technology-applications
Distributed Bragg Reflector semiconductor lasers are ideally suited for quantum technology applications due to their high efficiency, small footprint, and tunability in combination with the frequency…
Tripling the light extraction efficiency of a deep ultraviolet LED using a nanostructured p-contact
/forschung/publikationen/tripling-the-light-extraction-efficiency-of-a-deep-ultraviolet-led-using-a-nanostructured-p-contact
Despite a wide array of applications, deep ultra-violet light emitting diodes offer relatively poor efficiencies compared to their optical counterparts. A contributing factor is the lower light…
Refractory metal-based ohmic contacts on β-Ga2O3 using TiW
/forschung/publikationen/tripling-the-light-extraction-efficiency-of-a-deep-ultraviolet-led-using-a-nanostructured-p-contact-1
The present work investigates the use of the refractory metal alloy TiW as a possible candidate for the realization of ohmic contacts to the ultrawide bandgap semiconductor β-Ga2O3. Ohmic…