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Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters
/forschung/publikationen/mechanisms-limiting-the-operation-time-of-uvb-alingan-quantum-well-light-emitters
Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters J.W. Tomma, J. Ruschelb, H.K. Chob, S. Einfeldtb a Max–Born–Institut für Nichtlineare…
Comparison of micro-integrated dual-wavelength master oscillator power amplifiers at 785 nm
/forschung/publikationen/comparison-of-micro-integrated-dual-wavelength-master-oscillator-power-amplifiers-at-785-nm
Comparison of micro-integrated dual-wavelength master oscillator power amplifiers at 785 nm A. Müller, M. Maiwald, B. Sumpf Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für…
Comparison of dual-wavelength Y-branch DBR single chip diode lasers and diode laser arrays at 785 nm
/forschung/publikationen/comparison-of-dual-wavelength-y-branch-dbr-single-chip-diode-lasers-and-diode-laser-arrays-at-785-nm
Comparison of dual-wavelength Y-branch DBR single chip diode lasers and diode laser arrays at 785 nm L.S. Theurer, M. Maiwald, A. Müller, J. Fricke, A. Knigge,…
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
/forschung/publikationen/degradation-of-algan-based-sqw-uv-c-leds-investigated-by-capacitance-deep-level-transient-spectroscopy
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy F. Piva1, M. Buffolo1, C. De Santi1, M. Pilati1, N. Roccato1,…
Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency
/forschung/publikationen/buried-regrown-implant-structure-diode-lasers-with-ultra-thick-epitaxy-for-resistance-to-mounting-stress-without-loss-in-efficiency
Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency B. King, S. Arslan, A. Boni,…
Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars
/forschung/publikationen/tailored-in-plane-thermal-profiles-for-narrower-lateral-far-field-in-kilowatt-class-9xx-nm-diode-laser-bars
Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars Md.J. Miaha, M.M. Karowa, M. Elattara, D. Martina,…
9 W tapered laser diodes with high beam quality at 760 nm
/forschung/publikationen/9-w-tapered-laser-diodes-with-high-beam-quality-at-760-nm
9 W tapered laser diodes with high beam quality at 760 nm C. Mourikis, D. Feise, H. Wenzel, P. Della Casa, K. Paschke, G. Tränkle Ferdinand-Braun-Institut gGmbH,…
Deep learning based visual inspection of facets and p-sides for efficient quality control of diode lasers
/forschung/publikationen/deep-learning-based-visual-inspection-of-facets-and-p-sides-for-efficient-quality-control-of-diode-lasers
Deep learning based visual inspection of facets and p-sides for efficient quality control of diode lasers C. Zinka, M. Ekteraia, D. Martina, W. Clemensb, A. Maennelb,…
Single mode 660 nm DBR tapered laser with 1 W optical output power
/forschung/publikationen/single-mode-660-nm-dbr-tapered-laser-with-1-w-optical-output-power
Single mode 660 nm DBR tapered laser with 1 W optical output power G. Blume, O. Matalla, H. Wenzel, A. Maaßdorf, D. Feise, J. Fricke, P. Ressel,…
Pilot investigations on solids, liquids and gases using a portable shifted excitation Raman difference spectroscopy sensor system
/forschung/publikationen/pilot-investigations-on-solids-liquids-and-gases-using-a-portable-shifted-excitation-raman-difference-spectroscopy-sensor-system
Pilot investigations on solids, liquids and gases using a portable shifted excitation Raman difference spectroscopy sensor system M. Maiwald, K. Sowoidnich, B. Sumpf …