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In situ control of indium incorporation in (AlGa)1-xInxP layers
/forschung/publikationen/in-situ-control-of-indium-incorporation-in-alga1-xinxp-layers
Metalorganic vapor phase epitaxy growth of red emitting laser structures based on (AlGa)1-xInxP (AlGaInP) compounds requires thorough control of In incorporation during growth of AlGaInP layers which…
Phase Noise Reduction in Semiconductor Optical Amplifiers using Low-Index Quantum Barrier Structures
/forschung/publikationen/phase-noise-reduction-in-semiconductor-optical-amplifiers-using-low-index-quantum-barrier-structures
The phase noise caused by current fluctuations in single-pass semiconductor optical amplifiers is experimentally investigated. Using low-index quantum barrier designs in prototype devices is found to…
Distributed Bragg Reflector Lasers at 689.45 nm for Sr Spectroscopy
/forschung/publikationen/distributed-bragg-reflector-lasers-at-68945-nm-for-sr-spectroscopy
We present distributed Bragg reflector lasers optimized for strontium-based quantum technology applications at 689.449 nm. The devices achieved optical output powers up to 88 mW, four times…
A UV-C LED-based unit for continuous decontamination of the sheath fluid in a flow-cytometric cell sorter
/forschung/publikationen/a-uv-c-led-based-unit-for-continuous-decontamination-of-the-sheath-fluid-in-a-flow-cytometric-cell-sorter
Aseptic cell sorting is challenging, especially when a flow-cytometric cell sorter is not operated in a sterile environment. The sheath fluid system of a cell sorter may be contaminated with germs…
The Influence of a Residual Reflectivity at the Front Facet of a Multisection Master-Oscillator Power-Amplifier
/forschung/publikationen/the-influence-of-a-residual-reflectivity-at-the-front-facet-of-a-multisection-master-oscillator-power-amplifier
This paper reports on the theoretical end experimental investigation of the output characteristics of a multisection master-oscillator power-amplifier (MOPA). It consists of a master oscillator (MO)…
Impedance minimization of the CERN Super Proton Synchrotron cavities using the generalized coupled S-parameter method
/forschung/publikationen/impedance-minimization-of-the-cern-super-proton-synchrotron-cavities-using-the-generalized-coupled-s-parameter-method
In the context of the Large Hadron Collider (LHC) injector upgrade, components with high contribution to the beam coupling impedance of the injector chain have to be identified and optimized to…
On the Influence of Transistor Dimensions on the Dispersive Behavior in AlGaN/GaN HEMT-Based PAs and Robust LNAs
/forschung/publikationen/on-the-influence-of-transistor-dimensions-on-the-dispersive-behavior-in-algangan-hemt-based-pas-and-robust-lnas-1-1
Trap-induced dispersive effects play an important role in PAs and robust LNAs based on AlGaN/GaN-HEMTs. In this paper, the influence of scaling gate-source (GS) and gate-drain (GD) separation is…
A 4 GHz Digital Class-E Outphasing PA
/forschung/publikationen/a-4-ghz-digital-class-e-outphasing-pa
This paper presents for the first time a GaN-based digital class-E outphasing power amplifier (PA) for 5G applications in the 4 GHz range. The amplifier consists of two digital PA MMICs with a…
An Injection-Lockable InP-DHBT Source Operating at 421 GHz with -2.4 dBm Output Power and 1.7% DC-to-RF Efficiency
/forschung/publikationen/an-injection-lockable-inp-dhbt-source-operating-at-421-ghz-with-24-dbm-output-power-and-17-dc-to-rf-efficiency
In this work, an injection-lockable push-push oscillator operating at 421 GHz is presented. The circuit is based on a 0.5 µm transferred substrate InP DHBT MMIC process. A peak output…
Pioneering evaluation of GaN transistors in geostationary satellites
/forschung/publikationen/pioneering-evaluation-of-gan-transistors-in-geostationary-satellites
In this paper, we present the results of a 6-year experiment in space that studied the effects of radiation in Gallium Nitride (GaN) electronics in geostationary orbit. Four GaN transistors in a…