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A 4 GBaud 5 Vpp Pre-Driver for GaN based Digital PAs in 22 nm FDSOI using LDMOS
/forschung/publikationen/a-4-gbaud-5-vpp-pre-driver-for-gan-based-digital-pas-in-22-nm-fdsoi-using-ldmos
This paper presents a 4 GBaud pre-driver chip for GaN-based RF digital transmitter chains providing voltage swings up to 5Vpp at typical capacitive load impedances (0.25 pF). The compact…
Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT Technology
/forschung/publikationen/highly-linear-d-band-low-noise-amplifier-with-85db-noise-figure-in-inp-dhbt-technology
This paper presents a D-band low noise amplifier (LNA) using an 0.5 µm InP-DHBT technology. The LNA circuit design is based on a 2-way combined cascode unit power cell. The measured LNA…
Output Power Limited Rugged GaN LNA MMIC
/forschung/publikationen/output-power-limited-rugged-gan-lna-mmic
Rugged GaN HEMT low-noise amplifiers are in the receive path of T/R front ends are interesting for many applications. But the common concept of achieving ruggedness by reducing the gate DC current…
Statistical Modeling of GaN HEMTs by Direct Transfer of Variations to Model Parameters
/forschung/publikationen/statistical-modeling-of-gan-hemts-by-direct-transfer-of-variations-to-model-parameters
A statistical physics-based model for GaN HEMTs with a direct transfer of variations to model parameters is proposed in this paper. This statistical approach includes the collection of available data…
Inter-Laboratory Comparison of On-Wafer Broadband 70kHz-220GHz Single-Sweep Measurements
/forschung/publikationen/inter-laboratory-comparison-of-on-wafer-broadband-70khz-220ghz-single-sweep-measurements
This paper discusses methods and results of the first known inter-laboratory on-wafer measurement comparison campaign for a 70 kHz-220 GHz single-sweep measurement system. Intra- and…
Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers
/forschung/publikationen/molten-barium-hydroxide-as-defect-selective-drop-etchant-for-dislocation-analysis-on-aluminum-nitride-layers
In this article, the suitability of the etchants NaOH/KOH and Ba(OH)2 for defect etching of metalorganic vapour-phase epitaxy (MOVPE) grown AlN layers with a MgO-assisted “drop method” is compared.…
Deterministic Generation and Guided Motion of Magnetic Skyrmions by Focused He+-Ion Irradiation
/forschung/publikationen/deterministic-generation-and-guided-motion-of-magnetic-skyrmions-by-focused-he-ion-irradiation
Magnetic skyrmions are quasiparticles with nontrivial topology, envisioned to play a key role in next-generation data technology while simultaneously attracting fundamental research interest due to…
Determination of Soil Constituents Using Shifted Excitation Raman Difference Spectroscopy
/forschung/publikationen/determination-of-soil-constituents-using-shifted-excitation-raman-difference-spectroscopy
Soil analysis to estimate soil fertility parameters is of great importance for precision agriculture but nowadays it still relies mainly on complex and time-consuming laboratory methods. Optical…
Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices
/forschung/publikationen/areal-vertical-transmission-line-model-measurement-for-drift-region-characterization-in-vertical-gan-based-devices
In this work we present a process control monitoring (PCM) device for electrical characterization of vertical n--GaN drift region layer conduction properties. An areal vertical transmission line…
GaN-HEMT Integrated Switch LNA Module for 5G Mobile Communications
/forschung/publikationen/gan-hemt-integrated-switch-lna-module-for-5g-mobile-communications
An integration of a two-stage low noise amplifier along with a single pole double throw switch being part of the transceiver front-end using GaN HEMT technology is presented in this paper. The…