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Low-index quantum-barrier single-pass tapered semiconductor optical amplifiers for efficient coherent beam combining
/forschung/publikationen/low-index-quantum-barrier-single-pass-tapered-semiconductor-optical-amplifiers-for-efficient-coherent-beam-combining
The requirements for coherent combination of high power GaAs-based single-pass tapered amplifiers are studied. Changes to the epitaxial layer structure are shown to bring higher beam quality and…
Wavelength stabilized high pulse power 48 emitter laser bars for automotive light detection and ranging application
/forschung/publikationen/wavelength-stabilized-high-pulse-power-48-emitter-laser-bars-for-automotive-light-detection-and-ranging-application
Diode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components for light detection and ranging systems, e.g. for autonomous driving and object…
Temperature-Dependent Charge Carrier Diffusion in [0001] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
/forschung/publikationen/temperature-dependent-charge-carrier-diffusion-in-lbrack0001rbrack-direction-of-gan-determined-by-luminescence-evaluation-of-buried-ingan-quantum-wells
Temperature-dependent transport of photoexcited charge carriers through a nominally undoped, c-plane GaN layer toward buried InGaN quantum wells is investigated by continuous-wave and time-resolved…
Highly linear fundamental up-converter in InP DHBT technology for W-band applications
/forschung/publikationen/highly-linear-fundamental-up-converter-in-inp-dhbt-technology-for-w-band-applications
A fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP-DHBT technology. The LO input of the Gilbert…
Overcoming the excessive compressive strain in AlGaN epitaxy by introducinghigh Si-doping in AlN templates
/forschung/publikationen/overcoming-the-excessive-compressive-strain-in-algan-epitaxy-by-introducinghigh-si-doping-in-aln-templates
The influence of compressive strain in high-quality AlN templates on the subsequent growth of AlGaN-based device layers was investigated. The AlN templates showed compressive strain of ∼-0.29%…
Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopy
/forschung/publikationen/bulk-photovoltaic-effect-in-carbon-doped-gallium-nitride-revealed-by-anomalous-surface-photovoltage-spectroscopy
A bulk photovoltaic effect was observed in insulating carbon-doped gallium nitride crystals by investigating the light-induced change of the contact potential difference with a Kelvin probe as a…
Evaluation of a GaN HEMT Half-Bridge embedded to a Multilayer Aluminum Nitride Substrate
/forschung/publikationen/evaluation-of-a-gan-hemt-half-bridge-embedded-to-a-multilayer-aluminum-nitride-substrate
Power electronic systems employing wide-bandgap GaN transistors promise high efficiency operation and superior power density but require minimized parasitic circuit elements and an effective cooling…
Enhanced Wall Plug Efficiency of AlGaN-Based Deep-UV LEDs Using Mo/Al as p-Contact
/forschung/publikationen/enhanced-wall-plug-efficiency-of-algan-based-deep-uv-leds-using-moal-as-p-contact
P-type contacts with a high reflectivity in the ultra-violet spectral region made of molybdenum/aluminum (Mo/Al) on AlGaN-based deep-ultraviolet light-emitting diodes (DUVLEDs) emitting at…
Theoretical investigation of a miniature microwave driven plasma jet
/forschung/publikationen/theoretical-investigation-of-a-miniature-microwave-driven-plasma-jet
Radio frequency driven plasma jets are compact plasma sources which are used in many advanced fields such as surface engineering or biomedicine. The MMWICP (miniature micro wave ICP) is a particular…
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications
/forschung/publikationen/the-influence-of-the-gate-trench-orientation-to-the-crystal-plane-on-the-conduction-properties-of-vertical-gan-misfets-for-laser-driving-applications
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications E. Bahat Treidel, O. Hilt,…