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A W-Band Transceiver Chip for Future 5G Communications in InP-DHBT Technology
/forschung/publikationen/a-w-band-transceiver-chip-for-future-5g-communications-in-inp-dhbt-technology
This paper presents a W-band transceiver chip using InP-DHBT technology for future 5G application. It consists of a transceiver switch, a medium power amplifier (MPA) and a low noise amplifier (LNA)…
Modeling of InP DHBTs in a Transferred-Substrate Technology with Diamond Heat Spreader
/forschung/publikationen/modeling-of-inp-dhbts-in-a-transferred-substrate-technology-with-diamond-heat-spreader
This paper presents a compact model for InP DHBTs in a transferred-substrate technology with a diamond heat spreader. The heat spreading layer is introduced to effectively remove the generated heat…
Simulating Drain Lag of GaN HEMTs with physics-based ASM model
/forschung/publikationen/simulating-drain-lag-of-gan-hemts-with-physics-based-asm-model
This paper presents a drain-lag model for GaN HEMTs, enhancing the simulation accuracy of the physics-based compact model ASM-HEMT. The proposed trap model requires a minimum number of measurements…
Measuring the sensitivity to optical feedback of single-frequency high-power laser diodes
/forschung/publikationen/measuring-the-sensitivity-to-optical-feedback-of-single-frequency-high-power-laser-diodes
Laser diodes, in general, are sensitive to optical feedback, especially with regard to maintaining single-frequency operation. Until now, however, the feedback sensitivity of high-power devices such…
Spatial filtering of a six-wavelength DBR-RW laser in a MOPA system
/forschung/publikationen/spatial-filtering-of-a-six-wavelength-dbr-rw-laser-in-a-mopa-system
Lasing emission at multiple wavelengths can be used in different sensing applications and in optical telecommunication. In this work, we report a six-wavelength distributed Bragg reflector (DBR)…
On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs
/forschung/publikationen/on-the-conduction-properties-of-vertical-gan-n-channel-trench-misfets
ON-state conductance properties of vertical GaN n-channel trench MISFETs manufactured on different GaN substrates and having different gate trench orientations are studied up to 200°C ambient…
Accurate in vivo tumor detection using plasmonic-enhanced shifted-excitation Raman difference spectroscopy (SERDS)
/forschung/publikationen/accurate-in-vivo-tumor-detection-using-plasmonic-enhanced-shifted-excitation-raman-difference-spectroscopy-serds
For the majority of cancer patients, surgery is the primary method of treatment. In these cases, accurately removing the entire tumor without harming surrounding tissue is critical; however, due to…
Ultracold atom interferometry in space
/forschung/publikationen/ultracold-atom-interferometry-in-space
Bose-Einstein condensates (BECs) in free fall constitute a promising source for space-borne interferometry. Indeed, BECs enjoy a slowly expanding wave function, display a large spatial coherence and…
A 1.4 kW 780 nm pulsed diode laser, high duty cycle, passively side-cooled pump module
/forschung/publikationen/a-14-kw-780-nm-pulsed-diode-laser-high-duty-cycle-passively-side-cooled-pump-module
A diode laser module emitting 1.4 kW optical in-pulse power near 780 nm optimized for high (≥ 10%) duty-cycle operation in a micro-channel free design is presented. With full…
A Modular MIMO Millimeter-Wave Imaging Radar System for Space Applications and Its Components
/forschung/publikationen/a-modular-mimo-millimeter-wave-imaging-radar-system-for-space-applications-and-its-components
This article presents the design and prototyping of components for a modular multiple-input multiple-output (MIMO) millimeter-wave radar for space applications. A single radar panel consists of 8…