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Shifted Excitation Raman Difference Spectroscopy with Charge-Shifting Charge-Coupled Device (CCD) Lock-In Detection
/forschung/publikationen/shifted-excitation-raman-difference-spectroscopy-with-charge-shifting-charge-coupled-device-ccd-lock-in-detection
Shifted excitation Raman difference spectroscopy (SERDS) can provide effective, chemically specific information on fluorescent samples. However, the restricted ability for fast alternating detection…
Performance Analysis of a Low-Noise, Highly Linear Distributed Amplifier in 500-nm InP/InGaAs DHBT Technology
/forschung/publikationen/performance-analysis-of-a-low-noise-highly-linear-distributed-amplifier-in-500-nm-inpingaas-dhbt-technology
This article is an extension of the previous report on an ultrawideband distributed amplifier (DA) in the InP double heterojunction bipolar transistor (DHBT) technology. With the choice of a tricode…
Determination of Sapphire Off-Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers
/forschung/publikationen/determination-of-sapphire-off-cut-and-its-influence-on-the-morphology-and-local-defect-distribution-in-epitaxially-laterally-overgrown-aln-for-optically-pumped-uvc-lasers
Herein, a systematic study of the morphology and local defect distribution in epitaxially laterally overgrown (ELO) AlN on c-plane sapphire substrates with different off-cut angles ranging from…
A single-laser alternating-frequency magneto-optical trap
/forschung/publikationen/a-single-laser-alternating-frequency-magneto-optical-trap
In this paper, we present a technique for magneto-optical cooling and trapping of neutral atoms using a single laser. The alternating-frequency magneto-optical trap (AF-MOT) uses an agile light…
Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes
/forschung/publikationen/effect-of-quantum-barrier-composition-on-electro-optical-properties-of-algan-based-uvc-light-emitting-diodes
The height of the barrier around the AlGaN quantum well has a strong impact on the external quantum efficiency of UVC light emitting diodes (LEDs) as it affects the carrier confinement, the…
Displacement Talbot lithography for nano-engineering of III-nitride materials
/forschung/publikationen/displacement-talbot-lithography-for-nano-engineering-of-iii-nitride-materials
Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography…
Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application
/forschung/publikationen/hole-injection-mechanism-in-the-quantum-wells-of-blue-light-emitting-diode-with-v-pits-for-micro-display-application
The current injection mechanisms for blue light emitting diodes (LEDs) with and without V pits were examined by controlling the bandgaps of InGaN quantum wells (QWs), which were changed by reducing…
Nitride Semiconductors
/forschung/publikationen/nitride-semiconductors
The III-nitrides have successfully made their way into a number of economically important fields, both in electronics and optoelectronics. This chapter first discusses the important properties of the…
High-power laser diodes for direct applications and laser pumping
/forschung/publikationen/high-power-laser-diodes-for-direct-applications-and-laser-pumping
This chapter focuses primarily on progress in HPDLS that are grown on GaAs substrates and emit in the operating wavelength range λop = 900... 1000 nm, where the highest…
Progress in Efficiency and Brightness in GaAs-Based High Power Diode Lasers
/forschung/publikationen/progress-in-efficiency-and-brightness-in-gaas-based-high-power-diode-lasers
Continuous improvement is required in the properties of GaAs-based high power diode lasers, to support the needs of the rapidly growing material processing market, amongst others. A brief overview is…