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Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive
/forschung/publikationen/characterization-of-the-impairment-and-recovery-of-gan-hemts-in-low-noise-amplifiers-under-input-overdrive
This paper reports an investigation of the dynamic behavior of a GaN-HEMT, which is subjected to high reverse gate voltage pulses. These stress conditions are typical for robust LNAs under RF input…
Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Signal Performance
/forschung/publikationen/modeling-base-collector-heterojunction-barrier-effect-in-inp-dhbts-for-improved-large-signal-performance
In this paper, the large-signal model of InP double heterojunction bipolar transistors (DHBTs) is improved by modeling the soft-knee effect. The soft-knee effect in the DHBTs is explained by the…
High Conversion Gain Up-Converter with +5 dBm OP1dB in InP DHBT Technology for Ultra Capacity Wireless Applications
/forschung/publikationen/high-conversion-gain-up-converter-with-5-dbm-op1db-in-inp-dhbt-technology-for-ultra-capacity-wireless-applications
A fundamental frequency up-converter for ultra-capacity wireless applications with high conversion gain is presented, realized as double-balanced Gilbert cell mixer using an 800 nm transferred…
Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
/forschung/publikationen/skin-tolerant-inactivation-of-multiresistant-pathogens-using-far-uvc-leds
Multiresistant pathogens such as methicillin-resistant Staphylococcus aureus (MRSA) cause serious postoperative infections. A skin tolerant far-UVC (< 240 nm) irradiation system for…
Comparison of Ultraviolet B Light-Emitting Diodes with Single or Triple Quantum Wells
/forschung/publikationen/comparison-of-ultraviolet-b-light-emitting-diodes-with-single-or-triple-quantum-wells
Light-emitting diodes (LEDs) with an emission wavelength of 310 nm containing either a single or a triple quantum well are compared regarding their efficiency and long-term stability. In…
Spatially modulated broad-area lasers for narrow lateral far-field divergence
/forschung/publikationen/spatially-modulated-broad-area-lasers-for-narrow-lateral-far-field-divergence-1
A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed…
Quantification of Trace-Level Silicon Doping in AlxGa1-xN Films Using Wavelength-Dispersive X-Ray Microanalysis
/forschung/publikationen/quantification-of-trace-level-silicon-doping-in-alxga1-xn-films-using-wavelength-dispersive-x-ray-microanalysis-1
Wavelength-dispersive X-ray (WDX) spectroscopy was used to measure silicon atom concentrations in the range 35-100 ppm [corresponding to (3-9) × 1018 cm-3] in doped…
Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
/forschung/publikationen/light-extraction-efficiency-and-internal-quantum-efficiency-of-fully-uvc-transparent-algan-based-leds
The light extraction efficiency (LEE), external quantum efficiency (EQE), and current-voltage characteristics of deep ultraviolet light emitting diodes (DUV-LEDs) with different aluminum mole…
Direct observation of resonant tunneling in heterostructure with a single quantum well
/forschung/publikationen/direct-observation-of-resonant-tunneling-in-heterostructure-with-a-single-quantum-well
A resonant-tunneling conductivity was experimentally registered in a doped heterostructure with a single quantum well using admittance spectroscopy. Earlier, this effect was only realized in…
A carbon-doping related luminescence band in GaN revealed by below bandgap excitation
/forschung/publikationen/a-carbon-doping-related-luminescence-band-in-gan-revealed-by-below-bandgap-excitation
Carbon doped GaN grown by hydride vapor phase epitaxy was investigated by photoluminescence and photoluminescence excitation spectroscopy covering a broad range of carbon concentrations. Above…