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Deterministic positioning of nanophotonic waveguides around single self-assembled quantum dots
/forschung/publikationen/deterministic-positioning-of-nanophotonic-waveguides-around-single-self-assembled-quantum-dots
The capability to embed self-assembled quantum dots (QDs) at predefined positions in nanophotonic structures is key to the development of complex quantum-photonic architectures. Here, we demonstrate…
Impact of Insulators and Their Deposition Method on the Reliability of AlInGaN-Based UVB LEDs
/forschung/publikationen/impact-of-insulators-and-their-deposition-method-on-the-reliability-of-alingan-based-uvb-leds
AlInGaN-based light emitting diodes (LEDs) emitting in the ultraviolet (UV) wavelength range around 310 nm were fabricated using 300 nm thick SiNx or SiO2 layers deposited by different…
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes
/forschung/publikationen/status-and-prospects-of-aln-templates-on-sapphire-for-ultraviolet-light-emitting-diodes
Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs) with focus on the work done…
Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
/forschung/publikationen/electrical-properties-and-microstructure-formation-of-val-based-n-contacts-on-high-al-mole-fraction-n-algan-layers
The electrical and structural properties of V/Al-based n-contacts on n-AlxGa1-xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are investigated. Ohmic n-contacts are obtained up to x=0.75…
Absolute frequency measurement of rubidium 5S-6P transitions
/forschung/publikationen/absolute-frequency-measurement-of-rubidium-5s-6p-transitions
We report on measurements of the 5S-6P rubidium transition frequencies for rubidium isotopes with an absolute uncertainty of ≤ 20 kHz for the 5S → 6P3/2 transition and…
High-brightness broad-area diode lasers with enhanced self-aligned lateral structure
/forschung/publikationen/high-brightness-broad-area-diode-lasers-with-enhanced-self-aligned-lateral-structure
Broad-area diode lasers with increased brightness and efficiency are presented, which are fabricated using an enhanced self-aligned lateral structure by means of a two-step epitaxial growth process…
Dispersion effects in on-state resistance of lateral Ga2O3 MOSFETs at 300 V switching
/forschung/publikationen/dispersion-effects-in-on-state-resistance-of-lateral-ga2o3-mosfets-at-300nbspv-switching
Static characterisation and fast switching processes of lateral β-Ga2O3 metal oxide semiconductor field-effect transistors (MOSFETs) are presented. The investigated transistors with 10 mm…
Dynamics in high-power diode lasers
/forschung/publikationen/dynamics-in-high-power-diode-lasers
Dynamics in high-power diode lasers U. Bandelowa, M. Radziunasa, A. Zeghuzib, H.-J. Wünscheb, and H. Wenzelb a Weierstrass Institute (WIAS), 10117 Berlin,…
Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence
/forschung/publikationen/optimization-of-the-epitaxial-growth-of-undoped-gan-waveguides-in-gan-based-laser-diodes-evaluated-by-photoluminescence
Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN…
Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope
/forschung/publikationen/advances-in-electron-channelling-contrast-imaging-and-electron-backscatter-diffraction-for-imaging-and-analysis-of-structural-defects-in-the-scanning-electron-microscope
In this article we describe the scanning electron microscopy (SEM) techniques of electron channelling contrast imaging and electron backscatter diffraction. These techniques provide information on…