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Noninvasive measurement of the 308 nm LED-based UVB protection factor of sunscreens
/forschung/publikationen/noninvasive-measurement-of-the-308-nm-led-based-uvb-protection-factor-of-sunscreens
The current method for determining the sun protection factor (SPF) requires erythema formation. Noninvasive alternatives have recently been suggested by several groups. Our group previously developed…
Improved lateral brightness in 940-nm high-power broad-area diode lasers using enhanced self-aligned structure
/forschung/publikationen/improved-lateral-brightness-in-940-nm-high-power-broad-area-diode-lasers-using-enhanced-self-aligned-structure
We present high-power broad-area diode lasers with improved beam quality, reduced threshold current, and increased efficiency, realized by implementing an enhanced self-aligned lateral structure.
Threshold voltage shift induced by intrinsic stress in gate metal of AlGaN/GaN HFET
/forschung/publikationen/threshold-voltage-shift-induced-by-intrinsic-stress-in-gate-metal-of-algangan-hfet
Mechanical stress/strain is altering the charging properties of piezoelectric materials. For AlGaN and GaN heterostructures, this phenomenon has been described theoretically (Ambacher et al 2000 J.…
Prototype of a compact rubidium-based optical frequency reference for operation on nanosatellites
/forschung/publikationen/prototype-of-a-compact-rubidium-based-optical-frequency-reference-for-operation-on-nanosatellites
Space-borne optical frequency references based on spectroscopy of atomic vapors may serve as an integral part of compact optical atomic clocks, which can advance global navigation systems or can be…
Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
/forschung/publikationen/origin-of-defect-luminescence-in-ultraviolet-emitting-algan-diode-structures
Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy…
Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
/forschung/publikationen/novel-900-nm-diode-lasers-with-epitaxially-stacked-multiple-active-regions-and-tunnel-junctions
A multi-active-region bipolar-cascade edge-emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the…
A 52-58 GHz Power Amplifier With 18.6-dBm Saturated Output Power for Space Applications
/forschung/publikationen/a-52-58-ghz-power-amplifier-with-186-dbm-saturated-output-power-for-space-applications
This brief presents a 52-58 GHz power amplifier (PA) with constant output power across the entire band. A new topology based on the impedance transformation of transmission lines was adopted as the…
The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication
/forschung/publikationen/the-patterning-toolbox-fib-o-mat-exploiting-the-full-potential-of-focused-helium-ions-for-nanofabrication
Focused beams of helium ions are a powerful tool for high-fidelity machining with spatial precision below 5 nm. Achieving such a high patterning precision over large areas and for different…
Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm
/forschung/publikationen/electrical-and-optical-characteristics-of-highly-transparent-movpe-grown-algan-based-tunnel-heterojunction-leds-emitting-at-232-nm
We present the growth and electro-optical characteristics of highly transparent AlGaN-based tunnel heterojunction light-emitting diodes (LEDs) emitting at 232 nm entirely grown by metalorganic…
Comb injection into a single-mode laser
/forschung/publikationen/comb-injection-into-a-single-mode-laser
Temporally- and spectrally-resolved phase and intensity emission characteri-zation of amplitude-modulated optical frequency comb generation and phase noise transfer of an initially single mode laser…