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Longitudinal Current Crowding as Power Limit in High Power 975 nm Diode Lasers
/forschung/publikationen/longitudinal-current-crowding-as-power-limit-in-high-power-975-nm-diode-lasers
Experiment and simulation of high power diode lasers reveals a longitudinally-varying current density profile, due to spatial hole-burning. Current crowding at the front facet increases with cavity…
A highly efficient GHz switching GaN-based synchronous buck converter module
/forschung/publikationen/a-highly-efficient-ghz-switching-gan-based-synchronous-buck-converter-module
The paper presents a highly efficient GaN-based synchronous buck converter suitable for switching in the lower GHz range. The module includes a very compact 2-stage GaN half-bridge converter MMIC…
Progress in GaAs-based Semiconductor Sources For High Brightness Beam-Combined Applications
/forschung/publikationen/progress-in-gaas-based-semiconductor-sources-for-high-brightness-beam-combined-applications
An overview is presented of studies at the FBH into GaAs-based semiconductor sources tailored for higher brightness in beam-combined applications, by making use of innovative device and packaging…
Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers
/forschung/publikationen/non-uniform-longitudinal-current-density-induced-power-saturation-in-gaas-based-high-power-diode-lasers
The output power of modern 975nm GaAs-based broad area diode lasers is limited by increasing carrier and photon losses at high bias. We use experiment and one-dimensional calculations on these…
Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices
/forschung/publikationen/challenges-to-overcome-breakdown-limitations-in-lateral-beta-ga2o3-mosfet-devices
In this work, the fabrication of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs) on Si-doped homoepitaxial layers on (100) Mg-doped semi-insulating β-Ga2O3…
Wide Field Spectral Imaging with Shifted Excitation Raman Difference Spectroscopy Using the Nod and Shuffle Technique
/forschung/publikationen/wide-field-spectral-imaging-with-shifted-excitation-raman-difference-spectroscopy-using-the-nod-and-shuffle-technique
Wide field Raman imaging using the integral field spectroscopy approach was used as a fast, one shot imaging method for the simultaneous collection of all spectra composing a Raman image. For the…
Mode competition in broad-ridge-waveguide lasers
/forschung/publikationen/mode-competition-in-broad-ridge-waveguide-lasers
The lateral brightness achievable with high-power GaAs-based laser diodes having long and broad waveguides is commonly regarded to be limited by the onset of higher-order lateral modes. For the study…
Material interfaces as performance-limiting factors in high power GaAs-based diode lasers
/forschung/publikationen/material-interfaces-as-performance-limiting-factors-in-high-power-gaas-based-diode-lasers
We review recent studies into internal and external material interface effects in GaAs-based broad-area diode-lasers, where these limit power and efficiency. The finite capture time for carriers into…
High-temperature annealing of AlN films grown on 4H-SiC
/forschung/publikationen/high-temperature-annealing-of-aln-films-grown-on-4h-sic
The effect of high-temperature annealing (HTA) at 1700°C on AlN films grown on 4H-SiC substrates by metalorganic vapor phase epitaxy has been studied. It is shown that the structural quality of…
High-Temperature Annealing of AlGaN
/forschung/publikationen/high-temperature-annealing-of-algan
In the past few years, high-temperature annealing of AlN has become a proven method for providing AlN layers with low dislocation densities. Herein, the example of Al0.77Ga0.23N is used to…