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Experimental investigation of nanosecond pulsed tapered-waveguide lasers obtaining extremely high brightness values
/forschung/publikationen/experimental-investigation-of-nanosecond-pulsed-tapered-waveguide-lasers-obtaining-extremely-high-brightness-values
Diode lasers generating nanosecond-long optical pulses with high output powers and a good beam quality are used for various applications, such as light detection and ranging (LiDAR) systems needed…
DBR-tapered lasers at 783 nm with narrowband emission and output powers up to 7 W
/forschung/publikationen/dbr-tapered-lasers-at-783-nm-with-narrowband-emission-and-output-powers-up-to-7-w
Wavelength stabilized, high-power diode lasers in the spectral range around 783 nm are requested as e.g. pump lasers for Tm:YAG lasers and as excitation light sources for Raman spectroscopy. In…
Vertical Design Approach for Suppressing Power Saturation in GaAs-Based High-Power Diode Lasers
/forschung/publikationen/vertical-design-approach-for-suppressing-power-saturation-in-gaas-based-high-power-diode-lasers
High-power GaAs-based diode lasers are the most efficient light sources and thus used in many industrial applications. Higher peak output power (Popt) and efficiency (ηE) are sought to reduce…
Increased Conversion Efficiency at 800 W Continuous Wave Output From Single 1-cm Diode Laser Bars at 940 nm
/forschung/publikationen/increased-conversion-efficiency-at-800-w-continuous-wave-output-from-single-1-cm-diode-laser-bars-at-940-nm
Diode lasers are key sources of optical energy for industrial machine tools and continuous improvement in their performance is needed to support performance and cost scaling efforts. For example,…
Semiconductor Laser Linewidth Theory Revisited
/forschung/publikationen/semiconductor-laser-linewidth-theory-revisited
More and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical…
GaN-channel HEMTs with AlN buffer for high-voltage switching
/forschung/publikationen/gan-channel-hemts-with-aln-buffer-for-high-voltage-switching
Lateral GaN-based transistors (HEMTs) for power-electronic switching up to 650 V have not yet approached their theoretical material limit in terms of RONA vs. VBr - unlike Si and SiC based…
Novel 1064 nm DBR lasers combining active layer removal and surface gratings
/forschung/publikationen/novel-1064-nm-dbr-lasers-combining-active-layer-removal-and-surface-gratings
The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows…
A Highly Linear Dual-Stage Amplifier With Beyond 1.75-THz Gain-Bandwidth Product
/forschung/publikationen/a-highly-linear-dual-stage-amplifier-with-beyond-175-thz-gain-bandwidth-product-1
This work reports a multipurpose highly linear ultrawideband amplifier with a gain-bandwidth product (GBP) of 1.75 THz, the highest reported in any monolithic microwave integrated circuit (MMIC)…
Digital PA Modulator with Phase Shifter for Phased Array Transmitters
/forschung/publikationen/digital-pa-modulator-with-phase-shifter-for-phased-array-transmitters
This paper presents a modulator for fully digital transmitter chains which allows to realize time delays with ps accuracy between several transmitter branches, as needed for phased array antennas in…
A 26 GHz GaN-MMIC with Integrated Switches for Discrete Level Supply Modulation
/forschung/publikationen/a-26-ghz-gan-mmic-with-integrated-switches-for-discrete-level-supply-modulation
A GaN-MMIC power amplifier (PA) for 5G applications in the 24 - 28 GHz frequency range with integrated multi-supply switches is presented. It is a three-stage conceptual design developed for the…