International Conference on Nitride Semiconductors
Das FBH ist mit mehreren Beiträgen auf der ICNS vertreten:
- Optical emission characteristics and valence band properties of (20-21) and (20-2-1) semipolar InGaN quantum wells
- Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN
- Multi-layer graphene electrodes for (Al, In)GaN-based visible and UV light emitting diodes
- External quantum efficiency of bottom-illuminated AlGaN-based solar-blind metal-semiconductor-metal photodetectors
- Efficient carrier injection into AlGaN-based UV-C LEDs emitting below 240 nm
- Unexpected high optical polarization ratio of high angle semipolar and nonpolar InGaN quantum wells at room temperature
- Thermal stability of and GaN growth by MOVPE on Ga2o3 substrates
- The influence of growth temperature, pressure, and V/III ratio on morphology and emission characteristics of AlGaN layers for deep UV light emitters