Photonics West
Das FBH ist auf der größten Konferenz zu Photonischen Technologien mit zahlreichen Beiträgen vertreten:
- In-situ shifted excitation Raman difference spectroscopy: development and demonstration of a portable sensor system at 785 nm
- Compact single-mode diode laser in the visible spectral range
- Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers (Invited Paper)
- Compact diode laser module at 1116 nm with an integrated optical isolation and a PM-SMF output
- Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space (Invited Paper)
- kW-class diode laser bars
- Progress in joule-class diode laser bars and high brightness modules for application in long-pulse pumping of solid state amplifiers
- Miniaturized laser amplifier modules for wavelength of 1180 nm with pm-fiber input and optical output power > 1 W
- Coherent beam combining architectures for high power tapered laser arrays
- Non-uniform DFB-surface-etched gratings for enhanced performance high power, high brightness broad area lasers
- 3.5 W of diffraction-limited green light at 515 nm from SHG of a single-frequency tapered diode laser
- Picosecond pulsed micro-module emitting near 560 nm using a frequency doubled gain-switched DBR ridge waveguide semiconductor laser
- 633 nm single-mode laser diode module with PM fiber output
- AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltages (Invited Paper)
- Improved light extraction and quantum efficiencies for UVB LEDs with UV-transparent p-AlGaN superlattices
- Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy
- 1030-nm diode-laser-based light source delivering pulses with nanojoule energies and picosecond duration adjustable by mode-locking or pulse-gating operation
- 785-nm dual-wavelength Y-branch DBR-RW diode laser with electrically adjustable wavelength distance between 0 nm and 2 nm
- Monolithic dual-wavelength diode lasers with sub-MHz narrowband emission at 785 nm
- 1030-nm DBR-tapered diode lasers with up to 16 W of optical output power
- In-situ metrology in multiwafer reactors during MOVPE of UV-LED structures (Invited Paper)
- Operation-induced defect generation in deep-UV (In)AlGaN-based LEDs investigated by electrical and optical spectroscopy