IWUMD

International workshop on UV materials and devices: Das FBH ist an folgenden Beiträgen beteiligt:

• Crystal defects in MOVPE grown AlN on bulk AlN
• Effect of Electron Blocking Layer Design and Mg-doping on the Performance of 310 nm Light Emitting Diodes
• Status and Challenges of AlN Bulk Crystal Growth for Use as Substrates in Deep-UV Emitters
• From step flow to quantum dots: Morphology of AlN, AlGaN and GaN on AlN and its effect on device properties
• Impact of Electron Blocking Layer Design on the Degradation Behavior of UVB Light Emitting Diodes
• Prospects and challenges for AlGaN-based deep UV LED technologies