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Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg
/forschung/publikationen/impact-of-acceptor-concentration-on-the-resistivity-of-niau-p-contacts-on-semipolar-20-21-ganmg
The p-type doping of GaN with Mg, in particular doping of p++ cap layers and its influence on the resistivity of Ni/Au contacts on semipolar (20-21) GaN, has been investigated. For this purpose, we…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/power-performance-of-65nbspnm-cmos-integrated-ldmos-transistors-at-wlan-and-x-band-frequencies
Laterally diffused metal oxide semiconductor (LDMOS) transistors with 10 V breakdown voltage have been implemented in a 65 nm Complementary metal oxide semiconductor (CMOS) process without…
Enabling novel functionality in heavily doped ZnO:Ga by nanostructuring: an efficient plasmonic refractive index sensor
/forschung/publikationen/enabling-novel-functionality-in-heavily-doped-znoga-by-nanostructuring-an-efficient-plasmonic-refractive-index-sensor
We demonstrate a proof-of-concept refractive index sensor based on heavily doped ZnO:Ga nanostructured in a grating configuration, which supports free space excitation of propagating surface…
Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements
/forschung/publikationen/determination-of-polarization-fields-in-group-iii-nitride-heterostructures-by-capacitance-voltage-measurements
The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells.…
Surface effects on thermoelectric properties of metallic and semiconducting nanowires
/forschung/publikationen/surface-effects-on-thermoelectric-properties-of-metallic-and-semiconducting-nanowires
Metallic and semiconducting nanowires (NWs) are of interest in the field of thermoelectrics, because they act as model system to investigate the influence of surfaces on the thermoelectric transport…
Comparison of yellow light emitting micro integrated laser modules with different geometries of the crystals for second harmonic generation
/forschung/publikationen/comparison-of-yellow-light-emitting-micro-integrated-laser-modules-with-different-geometries-of-the-crystals-for-second-harmonic-generation
In this work three different concepts for micro integrated laser sources emitting light at 560 nm are investigated. The modules have different near infrared diode laser sources and different…
Compact deep UV laser system at 222.5 nm by single-pass frequency doubling of high-power GaN diode laser emission
/forschung/publikationen/compact-deep-uv-laser-system-at-2225-nm-by-single-pass-frequency-doubling-of-high-power-gan-diode-laser-emission
Deep ultraviolet (DUV) lasers emitting below 300 nm are of great interest for many applications, for instance in medical diagnostics or for detecting biological agents. Established DUV lasers,…
Efficient coupling of inhomogeneous current spreading and electro-optical models for simulation of dynamics in broad-area semiconductor lasers
/forschung/publikationen/efficient-coupling-of-inhomogeneous-current-spreading-and-electro-optical-models-for-simulation-of-dynamics-in-broad-area-semiconductor-lasers
The aim of this work is an efficient implementation of a spatially resolved current spreading model defined in the vertical-lateral domain into a dynamic electro-optical solver acting in the…
Influence of Nonlinear Effects on the Characteristics of Pulsed High-Power BA DBR Lasers
/forschung/publikationen/influence-of-nonlinear-effects-on-the-characteristics-of-pulsed-high-power-ba-dbr-lasers
We analyze theoretically the influence of nonlinear effects such as spatial holeburning, 2-photon absorption and gain compression on the power-current and beam characteristics of a high-power…
An efficient W-band InP DHBT digital power amplifier
/forschung/publikationen/an-efficient-w-band-inp-dhbt-digital-power-amplifier
This paper presents for the first time high-efficiency W-band power amplifiers (PAs), the design of which follows the digital PA (DPA) design concept. Two DPAs with different output networks have…