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Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements
/forschung/publikationen/reliable-gan-hemt-modeling-based-on-chalmers-model-and-pulsed-s-parameter-measurements
GaN HEMT performance is still compromised by trapping effects, but no commercial circuit simulator already provides compact models that account for these effects. This work explores the capability of…
VSWR Protection of Power Amplifiers Using BST Components
/forschung/publikationen/vswr-protection-of-power-amplifiers-using-bst-components
A VSWR-protected ISM-band PA was realized using a BST based varactor for detuning of the input matching. Output VSWR levels of 30:1 can be tolerated by applying a varactor bias voltage of up to…
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
/forschung/publikationen/time-dependent-failure-of-gan-on-si-power-hemts-with-p-gan-gate
This paper reports an experimental demonstration of the time-dependent failure of GaN-on-Si power high-electron-mobility transistors with p-GaN gate, submitted to a forward gate stress. By means of…
Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
/forschung/publikationen/mechanisms-of-implantation-damage-formation-in-alxga1-xn-compounds
AlxGa1-xN alloys, covering the entire compositional range (0 ≤ x ≤ 1), were implanted at room temperature with 200 keV argon (Ar) ions to fluences ranging from…
Compact narrow linewidth diode laser modules for precision quantum optics experiments on board of sounding rockets
/forschung/publikationen/compact-narrow-linewidth-diode-laser-modules-for-precision-quantum-optics-experiments-on-board-of-sounding-rockets
We have realized a laser platform based on GaAs diode lasers that allows for an operation in mobile experimental setups in harsh environments, such as on sounding rockets. The platform comes in two…
A 330 GHz Active Frequency Quadrupler in InP DHBT Transferred-Substrate Technology
/forschung/publikationen/a-330-ghz-active-frequency-quadrupler-in-inp-dhbt-transferred-substrate-technology
This paper presents a wideband 330 GHz frequency quadrupler using 0.8 µm transferred substrate (TS) InP-HBT technology. The process includes a heat-spreading diamond layer, which improves…
Digital Microwave Power Amplifier with Energy Recovery
/forschung/publikationen/digital-microwave-power-amplifier-with-energy-recovery
The paper presents a digital microwave power amplifier (DPA) for the 900 MHz band which utilizes two GaN DPA MMICs, a wideband 180° hybrid coupler and a chargepump voltage-doubler rectifier to…
A 200 mW InP DHBT W-band Power Amplifier in Transferred-Substrate Technology with Integrated Diamond Heat Spreader
/forschung/publikationen/a-200-mw-inp-dhbt-w-band-power-amplifier-in-transferred-substrate-technology-with-integrated-diamond-heat-spreader
A power amplifier in 800 nm transferred-substrate InP DHBT technology is presented in this paper. The technology used in this work features an integrated diamond heat sink layer that has…
Wideband Tunable GaN HEMT Module Utilizing Thin-film BST Varactors for Efficiency Optimization
/forschung/publikationen/wideband-tunable-gan-hemt-module-utilizing-thin-film-bst-varactors-for-efficiency-optimization
This work covers the design and measurement of a low cost tunable impedance matching network (TMN) for highly linear and high power RF applications at telecommunication frequencies. A single…
A Three-Level Class-G Modulated 1.85 GHz RF Power Amplifier for LTE Applications with over 50% PAE
/forschung/publikationen/a-three-level-class-g-modulated-185-ghz-rf-power-amplifier-for-lte-applications-with-over-50-pae
A highly efficient three-level class-G modulated RF power amplifier (PA) is presented. The PA is designed to operate as downlink amplifier in the 1800-1900 MHz LTE-band. At 1.85 GHz the…