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High brightness photonic band crystal semiconductor lasers in the passive mode locking regime
/forschung/publikationen/high-brightness-photonic-band-crystal-semiconductor-lasers-in-the-passive-mode-locking-regime
High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm-2 sr-1…
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors
/forschung/publikationen/effect-of-gate-trench-fabrication-technology-on-reliability-of-algangan-heterojunction-field-effect-transistors
A comparison of reliability by means of mean-time-to-failure (MTTF) determined from three-temperature accelerated life time tests for two groups of AlGaN/GaN heterojunction field effect transistors…
Epitaxial Growth of GaN on LiAlO2 Substrates
/forschung/publikationen/epitaxial-growth-of-gan-on-lialo2-substrates
Epitaxial Growth of GaN on LiAlO2 Substrates A. Mogilatenkoa,b a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin,…
Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach
/forschung/publikationen/combining-sige-bicmos-and-inp-processing-in-an-on-top-of-chip-integration-approach
Applications such as radar imaging and wideband communications are driving the research on millimeter-wave circuits. For some applications SiGe hetero junction bipolar transistors (HBTs) are limited…
The effect of a distinct diameter variation on the thermoelectric properties of individual Bi0.39Te0.61 nanowires
/forschung/publikationen/the-effect-of-a-distinct-diameter-variation-on-the-thermoelectric-properties-of-individual-bi039te061-nanowires
The reduction of the thermal conductivity induced by nano-patterning is one of the major approaches for tailoring thermoelectric material properties. In particular, the role of surface roughness and…
European GaN Device Technologies for Microwave and Power Switching Applications
/forschung/publikationen/european-gan-device-technologies-for-microwave-and-power-switching-applications
An overview on European GaN technologies towards high power microwave and high voltage power switching applications is presented. It contains a survey on the most important technological approaches,…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/anisotropic-optical-properties-of-semipolar-algan-layers-grown-on-m-plane-sapphire
The valence band order of AlxGa1-xN is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (1122) AlGaN thin films grown on m-plane Al2O3. Point-by-point fitted…
High-voltage normally OFF GaN power transistors on SiC and Si substrates
/forschung/publikationen/high-voltage-normally-off-gan-power-transistors-on-sic-and-si-substrates
Transistors with 600 V blocking capability and low switching losses are needed for converting one-phase 230 V mains voltage to lower voltage levels in switch-mode power supplies. The…
Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser
/forschung/publikationen/single-pass-uv-generation-at-2225-nm-based-on-high-power-gan-external-cavity-diode-laser
We demonstrate a compact system for single-pass frequency doubling of high-power GaN diode laser radiation. The deep UV laser light at 222.5 nm is generated in a β-BaB2O4 (BBO) crystal. A…
High Power Diode Lasers for Pumping High Energy Solid State Lasers
/forschung/publikationen/high-power-diode-lasers-for-pumping-high-energy-solid-state-lasers
The optical energy used in high-energy-class solid state laser facilities is generated by high power diode lasers. This tutorial reviews and summarizes progress in ongoing efforts worldwide to…