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A Compact GaN-MMIC Non-Uniform Distributed Power Amplifier for 2 to 12 GHz
/forschung/publikationen/a-compact-gan-mmic-non-uniform-distributed-power-amplifier-for-2-to-12-ghz
A non-uniform distributed power amplifier for the frequency range from 2 to 12 GHz is presented. The coplanar GaN MMIC has 1.8 × 2.4 mm2 chip size. It achieves over the whole frequency…
2.45 GHz ISM-Band RF-PA Demonstrator for GaN-HEMT optimization
/forschung/publikationen/245-ghz-ism-band-rf-pa-demonstrator-for-gan-hemt-optimization
In this work empirical results of an investigation aimed at improving GaN-HEMTs for higher frequency operation are presented. Two GaN-HEMT versions with nominal 60W output power and different…
Frequency doubling of a passively mode-locked monolithic distributed Bragg reflector diode laser
/forschung/publikationen/frequency-doubling-of-a-passively-mode-locked-monolithic-distributed-bragg-reflector-diode-laser
In this work, frequency doubling of a passively mode-locked 3.5 mm long monolithic distributed Bragg reflector diode laser is investigated experimentally. At 1064 nm, optical pulses with a…
Dual-Wavelength Master Oscillator Power Amplifier Diode-Laser System at 785 nm
/forschung/publikationen/dual-wavelength-master-oscillator-power-amplifier-diode-laser-system-at-785nbspnm
A dual-wavelength master oscillator (MO) power amplifier (PA) diode-laser system emitting at 785 nm suitable for shifted excitation Raman difference spectroscopy is presented. The laser system…
Analysis of crystal orientation in AlN layers grown on m-plane sapphire
/forschung/publikationen/analysis-of-crystal-orientation-in-aln-layers-grown-on-m-plane-sapphire
Our study reports on the microstructure of AlN layers grown on m-plane sapphire by metal organic vapor phase epitaxy. We have found that AlN can nucleate with three different orientations on the m-…
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery
/forschung/publikationen/new-degradation-mechanism-observed-for-algangan-hemts-with-sub-100nbspnm-scale-unpassivated-regions-around-the-gate-periphery
AlGaN/GaN HEMTs with low gate leakage current in the µA/mm range have been fabricated with a small- unpassivated region close to the gate foot. They showed considerably higher critical voltage values…
STE-QUEST-test of the universality of free fall using cold atom interferometry
/forschung/publikationen/ste-quest-test-of-the-universality-of-free-fall-using-cold-atom-interferometry
The theory of general relativity describes macroscopic phenomena driven by the influence of gravity while quantum mechanics brilliantly accounts for microscopic effects. Despite their tremendous…
Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits
/forschung/publikationen/three-dimensional-inp-dhbt-on-sige-bicmos-integration-by-means-of-benzocyclobutene-based-wafer-bonding-for-mm-wave-circuits
In order to benefit from the material properties of both InP-HBT and SiGe-BiCMOS technologies we have employed three-dimensional (3D) Benzocyclobutene (BCB)-based wafer bonding integration scheme. A…
Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology
/forschung/publikationen/millimeter-wave-hetero-integrated-sources-in-inp-on-bicmos-technology
The paper presents millimeter-wave (mm-wave) signal sources using a hetero-integrated InP-on-BiCMOS semiconductor technology. Mm-wave signal sources feature fundamental frequency voltage-controlled…
Small- and large-signal modeling of InP HBTs in transferred-substrate technology
/forschung/publikationen/small-and-large-signal-modeling-of-inp-hbts-in-transferred-substrate-technology
In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit…