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Dual-Wavelength Y-Branch Distributed Bragg Reflector Diode Laser at 785 Nanometers for Shifted Excitation Raman Difference Spectroscopy
/forschung/publikationen/dual-wavelength-y-branch-distributed-bragg-reflector-diode-laser-at-785-nanometers-for-shifted-excitation-raman-difference-spectroscopy
A dual-wavelength Y-branch distributed Bragg reflector (DBR) diode laser at 785 nm is presented as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS). The…
Tunable 975 nm nanosecond diode-laser-based master-oscillator power-amplifier system with 16.3 W peak power and narrow spectral linewidth below 10 pm
/forschung/publikationen/tunable-975nbspnm-nanosecond-diode-laser-based-master-oscillator-power-amplifier-system-with-163nbspw-peak-power-and-narrow-spectral-linewidth-below-10nbsppm
A spectrally tunable, narrow linewidth master oscillator power amplifier system emitting ns pulses with high peak power is presented. The master oscillator is a distributed feedback ridge waveguide…
Distributed feedback lasers in the 760 to 810nm range and epitaxial grating design
/forschung/publikationen/distributed-feedback-lasers-in-the-760-to-810nm-range-and-epitaxial-grating-design
We present the results from distributed feedback (DFB) lasers with emission wavelengths ranging from 760 to 810 nm and focus on the optimization of Bragg gratings realized with a patterned GaAsP…
Small linewidths 76x nm DFB-laser diodes with optimized two-step epitaxial gratings
/forschung/publikationen/small-linewidths-76x-nm-dfb-laser-diodes-with-optimized-two-step-epitaxial-gratings
We present DFB laser diodes emitting in the 76x nm wavelengths range and focus on design and fabrication of the integrated Bragg gratings. Grating functionality is obtained with a periodically…
973 nm wavelength stabilized hybrid ns-MOPA diode laser system with 15.5 W peak power and a spectral line width below 10 pm
/forschung/publikationen/973nbspnm-wavelength-stabilized-hybrid-ns-mopa-diode-laser-system-with-155nbspw-peak-power-and-a-spectral-line-width-below-10nbsppm
A master oscillator power amplifier (MOPA) system for the generation of ns-pulses with high peak power, narrow spectral line width, and stabilized emission wavelength will be presented. The master…
Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3
/forschung/publikationen/band-gap-renormalization-and-burstein-moss-effect-in-silicon-and-germanium-doped-wurtzite-gan-up-to-1020nbspcm-3
The interplay between band gap renormalization and band filling (Burstein-Moss effect) in n-type wurtzite GaN is investigated. For a wide range of electron concentrations up to 1.6×1020 cm-3…
Impact of electron irradiation on electron holographic potentiometry
/forschung/publikationen/impact-of-electron-irradiation-on-electron-holographic-potentiometry
While electron holography in the transmission electron microscope offers the possibility to measure maps of the electrostatic potential of semiconductors down to nanometer dimensions, these…
Compact Blue Light Source by Single-Pass Second Harmonic Generation of DBR Tapered Laser Radiation
/forschung/publikationen/compact-blue-light-source-by-single-pass-second-harmonic-generation-of-dbr-tapered-laser-radiation
We demonstrate a continuous-wave 460-nm compact visible laser module having a footprint of 75 mm × 25 mm × 25 mm. This blue light source is achieved through single-pass second harmonic…
Nano-optical analysis of GaN-based diode lasers
/forschung/publikationen/nano-optical-analysis-of-gan-based-diode-lasers
Near-field scanning optical microscopy (NSOM) is applied for analyzing GaN-based diode lasers. The measurements are carried out at the front facets of standard devices without any additional…
Studies of limitations to lateral brightness in high power diode lasers using spectrally-resolved mode profiles
/forschung/publikationen/studies-of-limitations-to-lateral-brightness-in-high-power-diode-lasers-using-spectrally-resolved-mode-profiles
Efficient DFB broad-area lasers enable spectrally-resolved measurements of lateral field profiles to high powers, indicating brightness is limited by both increasing numbers of guided modes and…