Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Comparative theoretical and experimental studies of two designs of high-power diode lasers
/forschung/publikationen/comparative-theoretical-and-experimental-studies-of-two-designs-of-high-power-diode-lasers
Design and technology developments targeted at increasing both power conversion efficiency and optical output power of GaAs-based diode lasers are under intense study worldwide, driven by the demands…
Miniaturized highly brilliant diode laser modules for future display applications
/forschung/publikationen/miniaturized-highly-brilliant-diode-laser-modules-for-future-display-applications
We demonstrate diode laser modules with high spectral radiance larger than 1 GW/cm2/sr/nm in the visible spectral range. These highly brilliant laser light sources enable the development of…
940nm Broad Area Diode Lasers Optimized for High Pulse-Power Fiber Coupled Applications
/forschung/publikationen/940nm-broad-area-diode-lasers-optimized-for-high-pulse-power-fiber-coupled-applications
Diode lasers with 400 µm stripe widths measured in pulsed-current mode are shown to reach peak (saturation) powers of 60 W for 1 ms pulses (60 mJ) and 189 W for 300 ns…
Wavelength stabilized 785 nm DBR-ridge waveguide lasers with an output power of up to 215 mW
/forschung/publikationen/wavelength-stabilized-785-nm-dbr-ridge-waveguide-lasers-with-an-output-power-of-up-to-215-mw
Wavelength stabilized distributed Bragg reflector (DBR) diode lasers at an emission wavelength of 785 nm will be presented. The devices have a 14 nm thick GaAsP single quantum well as…
Narrow Stripe Broad Area Lasers With High Order Distributed Feedback Surface Gratings
/forschung/publikationen/narrow-stripe-broad-area-lasers-with-high-order-distributed-feedback-surface-gratings
GaAs-based narrow-stripe broad-area lasers with integrated surface gratings are shown to operate with high power and efficiency, low beam parameter product (BPP), and narrow spectra. These…
Power Scaling of Nonlinear Frequency Converted Tapered Diode Lasers for Biophotonics
/forschung/publikationen/power-scaling-of-nonlinear-frequency-converted-tapered-diode-lasers-for-biophotonics
Diode lasers have proven to be versatile light sources for a wide range of applications. Nonlinear frequency conversion of high brightness diode lasers has recently resulted in visible light power…
High-Power Single-Mode Fiber Coupling of a Laterally Tapered Single-Frequency Diode Laser
/forschung/publikationen/high-power-single-mode-fiber-coupling-of-a-laterally-tapered-single-frequency-diode-laser
In this letter, we investigate experimentally singlemode fiber (SMF) coupling of a nondiffraction limited, astigmatic beam generated by a near-infrared distributed Bragg reflector tapered diode laser…
Micro-integrated extended cavity diode lasers for precision potassium spectroscopy in space
/forschung/publikationen/micro-integrated-extended-cavity-diode-lasers-for-precision-potassium-spectroscopy-in-space
We present a micro-integrated, extended cavity diode laser module for space-based experiments on potassium Bose-Einstein condensates and atom interferometry. The module emits at the wavelength of the…
Normally-off GaN Transistors for Power Applications
/forschung/publikationen/normally-off-gan-transistors-for-power-applications
Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by…
Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices
/forschung/publikationen/bias-dependent-pospieszalski-noise-model-for-gan-hemt-devices
This paper proposes a new bias-dependent description for the Pospieszalski noise model for GaN HEMT devices. It is also proposed to replace the traditional description of the drain noise temperature…