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Ordering in GaxIn1-xAsyP1-y grown on GaAs by metalorganic vapour-phase epitaxy

/forschung/publikationen/ordering-in-gaxin1-xasyp1-y-grown-on-gaas-by-metalorganic-vapour-phase-epitaxy

We have investigated ordering behaviour in MOVPE-grown GaInAsP lattice-matched to GaAs using luminescence and diffraction methods. Our observations indicate that the occurrence of ordering variants…

X-ray characterization of an Esaki-Tsu superlattice and transport properties

/forschung/publikationen/x-ray-characterization-of-an-esaki-tsu-superlattice-and-transport-properties

We have studied, by x-ray scattering, structural parameters of a short-period GaAs/AlAs superlattice and related the parameters to electric transport properties. Our results, for a superlattice…

Characterization of Laser Structures by EBIC Measurements and Simulation

/forschung/publikationen/characterization-of-laser-structures-by-ebic-measurements-and-simulation

The electron beam induced current (EBIC) profiles of laser structures based on InGaAsP/InGaP/GaAs show a main peak and an additional shoulder or peak. To understand this phenomenom EBIC profiles at…

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/forschung/publikationen/in-situ-characterization-of-strain-distribution-in-broad-area-high-power-lasers-under-operation-by-high-resolution-x-ray-diffraction-and-topography-using-synchrotron-radiation-1

Shift and shape of grating diffracted beams

/forschung/publikationen/shift-and-shape-of-grating-diffracted-beams

The grating diffraction of beams is theoretically investigated by applying an electromagnetic method (the Integral Equation System Method with Parametrization of the grating profile = IESMP) to their…

Beam propagation in an active planar waveguide with an angled bragg grating (α laser)

/forschung/publikationen/beam-propagation-in-an-active-planar-waveguide-with-an-angled-bragg-grating-alpha-laser

In the angled Bragg grating semiconductor laser (α laser), light does not propagate at a right angle with respect to the two-dimensional corrugated grating of the planar waveguide. A closed-form…

Zonal diffraction efficiencies and imaging of micro-Fresnel lenses

/forschung/publikationen/zonal-diffraction-efficiencies-and-imaging-of-micro-fresnel-lenses

The dependence of the zonal efficiency of a transmission Fresnel lens on the number of quantization levels and on the polarization of the light, without and with an antireflection (AR) overcoating is…

Photoluminescence on ordered GaxIn1-xAsyP1-y

/forschung/publikationen/photoluminescence-on-ordered-gaxin1-xasyp1-y

Photoluminescence of Ga0.54In0.46As0.12P0.88 layers grown by metalorganic vapor phase epitaxy on differently oriented GaAs substrates has been investigated. Valence-band splitting due to symmetry…

Ohmic Pd/Zn/Au/LaB6/Au contacts on p-type In0.53Ga0.47As: Electrical and metallurgical properties

/forschung/publikationen/ohmic-pdznaulab6au-contacts-on-p-type-in053ga047as-electrical-and-metallurgical-properties

The development of a shallow and low-resistive contact on moderately doped (p≈5×1018 cm-3 In0.53Ga0.47As is demonstrated. By reducing the layer thicknesses of a conventional…

Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n+-InGaAs/n-GaAs layer systems

/forschung/publikationen/low-resistance-thermally-stable-aupttiwsin-ohmic-contacts-on-n-ingaasn-gaas-layer-systems

The electrical properties of the ohmic contact systems Au/Pt/Ti/WSiN and Au/Pt/Ti to n+-InGaAs/GaAs layers grown by metalorganic vapor phase epitaxy were investigated and compared to each other. The…