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Epitaxial Growth of GaN on LiAlO2 Substrates
/forschung/publikationen/epitaxial-growth-of-gan-on-lialo2-substrates
Epitaxial Growth of GaN on LiAlO2 Substrates A. Mogilatenkoa,b a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin,…
Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach
/forschung/publikationen/combining-sige-bicmos-and-inp-processing-in-an-on-top-of-chip-integration-approach
Applications such as radar imaging and wideband communications are driving the research on millimeter-wave circuits. For some applications SiGe hetero junction bipolar transistors (HBTs) are limited…
The effect of a distinct diameter variation on the thermoelectric properties of individual Bi0.39Te0.61 nanowires
/forschung/publikationen/the-effect-of-a-distinct-diameter-variation-on-the-thermoelectric-properties-of-individual-bi039te061-nanowires
The reduction of the thermal conductivity induced by nano-patterning is one of the major approaches for tailoring thermoelectric material properties. In particular, the role of surface roughness and…
European GaN Device Technologies for Microwave and Power Switching Applications
/forschung/publikationen/european-gan-device-technologies-for-microwave-and-power-switching-applications
An overview on European GaN technologies towards high power microwave and high voltage power switching applications is presented. It contains a survey on the most important technological approaches,…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/anisotropic-optical-properties-of-semipolar-algan-layers-grown-on-m-plane-sapphire
The valence band order of AlxGa1-xN is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (1122) AlGaN thin films grown on m-plane Al2O3. Point-by-point fitted…
High-voltage normally OFF GaN power transistors on SiC and Si substrates
/forschung/publikationen/high-voltage-normally-off-gan-power-transistors-on-sic-and-si-substrates
Transistors with 600 V blocking capability and low switching losses are needed for converting one-phase 230 V mains voltage to lower voltage levels in switch-mode power supplies. The…
Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser
/forschung/publikationen/single-pass-uv-generation-at-2225-nm-based-on-high-power-gan-external-cavity-diode-laser
We demonstrate a compact system for single-pass frequency doubling of high-power GaN diode laser radiation. The deep UV laser light at 222.5 nm is generated in a β-BaB2O4 (BBO) crystal. A…
High Power Diode Lasers for Pumping High Energy Solid State Lasers
/forschung/publikationen/high-power-diode-lasers-for-pumping-high-energy-solid-state-lasers
The optical energy used in high-energy-class solid state laser facilities is generated by high power diode lasers. This tutorial reviews and summarizes progress in ongoing efforts worldwide to…
Low-temperature Optimized 940 nm Diode Laser Bars with 1.98 kW Peak Power at 203 K
/forschung/publikationen/low-temperature-optimized-940-nm-diode-laser-bars-with-198-kw-peak-power-at-203-k
Passively cooled 1-cm wide QCW diode laser bars with low-temperature optimized vertical designs reach output powers of 1.98 kW at 203 K, with conversion efficiency of 64% at 1 kW and 57% at 1.9 kW.
Comparison of two concepts for dual-wavelength DBR ridge waveguide diode lasers at 785 nm suitable for shifted excitation Raman difference spectroscopy
/forschung/publikationen/comparison-of-two-concepts-for-dual-wavelength-dbr-ridge-waveguide-diode-lasers-at-785-nm-suitable-for-shifted-excitation-raman-difference-spectroscopy
Two concepts of dual-wavelength 785-nm DBR ridge waveguide (RW) lasers, i.e. RW mini-arrays consisting of two DBR-RW lasers and Y-branch DBR-RW lasers, will be compared with respect to their…