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Potential of Coplanar X-band GaN-MMIC Power Amplifiers
/forschung/publikationen/potential-of-coplanar-x-band-gan-mmic-power-amplifiers
While the vast majority of GaN X-band PAs is realized as microstrip circuits, this paper reports design, fabrication and measurement of a coplanar version. The amplifier is processed using the FBH…
A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology
/forschung/publikationen/a-246-ghz-hetero-integrated-frequency-source-in-inp-on-bicmos-technology
A 246 GHz source in InP-on-BiCMOS technology is presented. It consists of a voltage controlled oscillator (VCO) in BiCMOS technology and a frequency tripler in transferred-substrate InP-HBT…
Crosstalk Corrections for Coplanar-Waveguide Scattering-Parameter Calibrations
/forschung/publikationen/crosstalk-corrections-for-coplanar-waveguide-scattering-parameter-calibrations
We study crosstalk and crosstalk corrections in coplanar-waveguide vector-network-analyzer calibrations. We show that while crosstalk corrections can improve measurement accuracy, the effectiveness…
Self-Heating in GaN Transistors Designed for High-Power Operation
/forschung/publikationen/self-heating-in-gan-transistors-designed-for-high-power-operation
DC and transient self-heating effects are investigated in normally off AlGaN/GaN transistors designed for a highpower operation. Electrical and optical methods are combined with thermal simulations;…
Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier
/forschung/publikationen/generation-of-spectrally-stable-continuous-wave-emission-and-ns-pulses-with-a-peak-power-of-4nbspw-using-a-distributed-bragg-reflector-laser-and-a-ridge-waveguide-power-amplifier
We have developed a diode-laser based master oscillator power amplifier (MOPA) light source which emits high-power spectrally stabilized and nearly-diffraction limited optical pulses in the…
Intra-cavity frequency-doubled Cr:LiCAF laser with 265 mW continuous-wave blue (395-405 nm) output
/forschung/publikationen/intra-cavity-frequency-doubled-crlicaf-laser-with-265nbspmw-continuous-wave-blue-395-405nbspnm-output
We describe continuous-wave (cw) intracavity frequency-doubling experiments performed with a Cr:LiCAF laser. The Cr:LiCAF crystal is home-grown and had passive losses below 0.15% per cm. The laser is…
Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers
/forschung/publikationen/double-heterostructure-ridge-waveguide-gaasalgaas-phase-modulator-for-780nbspnm-lasers
Results of a GaAs/AlGaAs-based phase modulator designed for an operating wavelength of 780 nm are presented for the first time. The modulator is based on a P-p-i-n-N double heterostructure and…
Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown
/forschung/publikationen/degradation-of-algangan-high-electron-mobility-transistors-in-the-current-controlled-off-state-breakdown
We investigate degradation mechanisms in AlGaN/GaN HEMTs which were repeatedly driven into the current-controlled off-state breakdown or subject to 60 s voltage- or current-controlled off state…
Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures
/forschung/publikationen/surface-topology-caused-by-dislocations-in-polar-semipolar-and-nonpolar-ingangan-heterostructures
The impact of dislocations on surface topology as well as on quantum well emission in c-plane, semipolar, and nonpolar InGaN/GaN heterostructures is being analyzed by microphotoluminescence and…
Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates
/forschung/publikationen/hydride-vapor-phase-epitaxy-of-c-plane-algan-layers-on-patterned-sapphire-substrates
Growth of AlxGa1-xN layers by hydride vapor-phase epitaxy on patterned sapphire substrates is investigated. The pattern consists of honeycombs which by their orientation and size promote the…