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Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology
/forschung/publikationen/millimeter-wave-hetero-integrated-sources-in-inp-on-bicmos-technology
The paper presents millimeter-wave (mm-wave) signal sources using a hetero-integrated InP-on-BiCMOS semiconductor technology. Mm-wave signal sources feature fundamental frequency voltage-controlled…
Small- and large-signal modeling of InP HBTs in transferred-substrate technology
/forschung/publikationen/small-and-large-signal-modeling-of-inp-hbts-in-transferred-substrate-technology
In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit…
Yield Improvement of Metal-insulator-metal Capacitors in MMIC Fabrication Process Based on AlGaN/GaN HFETs
/forschung/publikationen/yield-improvement-of-metal-insulator-metal-capacitors-in-mmic-fabrication-process-based-on-algangan-hfets
This contribution deals with the metal-insulator-metal (MIM) capacitor yield improvement in a GaN-based MMICs fabrication process. High MIM capacitor yield is one of the prerequisites for the…
400 mW external cavity diode laser with narrowband emission at 445 nm
/forschung/publikationen/400nbspmw-external-cavity-diode-laser-with-narrowband-emission-at-445nbspnm
A high-power external cavity diode laser (ECDL) system with narrowband emission is presented. The system is based on a commercially available high-power GaN laser diode. For the ECDL, a maximum…
Digital Doherty Transmitter with Envelope ΔΣ Modulated Class-D GaN Power Amplifier for 800 MHz band
/forschung/publikationen/digital-doherty-transmitter-with-envelope-ds-modulated-class-d-gan-power-amplifier-for-800nbspmhz-band
This paper presents a novel transmitter (Tx) architecture combining voltage-mode class-D power amplifiers (PAs) with an efficient 1-bit envelope delta-sigma modulation scheme for the 800 MHz…
Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth
/forschung/publikationen/defect-analysis-in-algan-layers-on-aln-templates-obtained-by-epitaxial-lateral-overgrowth
The defect distribution in thick AlN layers obtained by epitaxial lateral overgrowth (ELO-AlN) has been analyzed as a function of the miscut direction of the patterned sapphire substrate. A 0.25°…
Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals
/forschung/publikationen/generation-of-35-w-of-diffraction-limited-green-light-from-shg-of-a-single-tapered-diode-laser-in-a-cascade-of-nonlinear-crystals
Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode…
Watt-level continuous-wave diode lasers at 1180 nm with InGaAs quantum wells
/forschung/publikationen/watt-level-continuous-wave-diode-lasers-at-1180-nm-with-ingaas-quantum-wells
High-power broad area lasers at 1180 nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 1200 h at 1 W and are believed to be a key component for the…
Narrow-Stripe Broad-Area Lasers With Distributed-Feedback Surface Gratings as Brilliant Sources for High Power Spectral Beam Combining Systems
/forschung/publikationen/narrow-stripe-broad-area-lasers-with-distributed-feedback-surface-gratings-as-brilliant-sources-for-high-power-spectral-beam-combining-systems
Laser systems based on spectral beam combining (SBC) of broad-area (BA) diode lasers are promising tools for material processing applications. However, the system brightness is limited by the…
Study of Waveguide Design for high-power 9xx nm Diode Lasers operating at 200K
/forschung/publikationen/study-of-waveguide-design-for-high-power-9xx-nm-diode-lasers-operating-at-200k
Currently, a new generation of ultra-high-energy laser systems (ELI, HILASE) is in development that requires huge amounts of pump power. Their diode laser pump sources should be low cost ($/W) and…