F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, M. Weyers

Published in:

Appl. Phy. Lett., vol. 79, pp. 1965-1967 (2001).

Abstract:

Highley strained InGaAs quantum wells were grown by metalorganic vapor-phase epitaxy. By lowering the growth temperature to 530°C, a maximum photoluminescence wavelength of 1192 was achieved. High-power diode lasers with a maximum lasing wavelength of 1175 nm were fabricated. A continuous-wave output power of 12 W at a heat-sink temperature of 25°C was obtained at a lasing wavelength of 1120 nm.

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